NTHD4P02FT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTHD4P02FT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor that is mainly used as a switch or amplifier. It is a “Single” MOSFET, meaning that it has only one transistor in one package. It is used as a high-performance MOSFET for many applications such as power management, logic level shifting, high frequency switching, etc.

The NTHD4P02FT1G offers superior performance when used in applications requiring the ability to switch a large amount of power. It offers a wide range of features, including high power handling capacity, low on-state resistance, low leakage current, low maximu m gate-source capacitance, and improved ESD capability.

The NTHD4P02FT1G is mainly used in power management applications, such as DC-DC converters, power line communications, universal serial bus (USB) systems, etc. It is also used in high-frequency switching applications, such as wireless systems and embedded systems. Additionally, it is used as a voltage level shifter when the voltage difference between the two nodes is large.

The NTHD4P02FT1G is a very efficient MOSFET, due to its high power handling capacity and low on-state resistance. Its low on-state resistance allows for a very low voltage drop across the MOSFET when it is in the on-state. This makes the MOSFET very efficient and also reduces power loss in the circuit. Additionally, the NTHD4P02FT1G also has a very low gate-source capacitance, which allows for faster switching times and a reduction in power losses due to parasitic capacitance.

The NTHD4P02FT1G is a very versatile MOSFET. It is available in several package sizes, including TO-220 and SOT-25, which allows for flexibility in the electrical design. It also has a wide range of operating voltages, from -55V to 175V, enabling it to be used in a wide variety of applications.

The NTHD4P02FT1G is a P-channel enhancement-mode MOSFET. The working principle of this type of MOSFET can be summarized as follows: the source and drain terminals are connected to the circuit, and then a voltage is applied to the gate terminal, which in turn creates an electric field in the channel between the source and the drain. This creates a conductive pathway between the two terminals. The current flow is controlled by adjusting the voltage applied to the gate terminal, thus allowing the MOSFET to serve as an effective switch or amplifier.

In summary, the NTHD4P02FT1G is a versatile, high-performance MOSFET that is suitable for use in many applications. It can be used as a switch or amplifier, and offers superior performance and power handling capacity. It is available in several package sizes and has a wide range of operating voltages. Its working principle is based on the creation of an electric field in the channel between the source and the drain, which allows it to control the current flow between the two terminals.

The specific data is subject to PDF, and the above content is for reference