NTHD5904NT3G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	465pF @ 16V
FET Feature:	--
Power Dissipation (Max):	640mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	ChipFET™
Package / Case:	8-SMD, Flat Lead

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The NTHD5904NT3G is a type of field-effect transistor (FET), more specifically, a single MOSFET FET. It is a unipolar type of transistor that utilizes the field-effect of an electric field on a channel of semiconductor material. It is a three-terminal device with an insulated gate, source and drain. The NTHD5904NT3G is designed for low power applications such as power management, voltage level shifting and switching.The NTHD5904NT3G is a N-Channel enhancement mode transistor, meaning that it requires a higher voltage than the source to turn on the transistor. It is a complementary device to the common P-Channel enhancement mode transistor. The NTHD5904NT3G provides low on-resistance while occupying very small areas with its advanced small-signal MOSFET technology. It is an excellent choice when a high current gain and low capacitance characteristics are needed. The NTHD5904NT3G is an analog device and is used to amplify or switch digital signals. It is most commonly used in industrial, commercial and automotive applications, although other applications exist as well. It is also commonly used in switching, power management and voltage level shifting applications.The working principle of the NTHD5904NT3G is based on the electrostatic attraction between the gate of the transistor and the MOS channel. The gate creates an electric field that modulates the conductivity of the channel which controls the flow of electrons from the source to the drain. When a control signal is applied to the gate, the channel of the transistor will become conductive, allowing a current flow from the source to the drain. When the control signal is removed from the gate, the channel of the transistor will become semi-conductive, blocking the current from the source to the drain. This is the basis for the operation of the NTHD5904NT3G and is what makes it a valuable device for switching and power management applications.The NTHD5904NT3G has a wide array of applications. It is commonly used in switching, power management, voltage level shifting, and signal amplification. Its low on-resistance and small area footprint make it an ideal choice for many devices where power is a major concern. Its ability to switch and amplify signals makes it beneficial in digital circuits where it can be used to control logic operations.Overall, the NTHD5904NT3G is an excellent choice for low power applications such as power management, voltage level shifting, switching, and signal amplification. Its advanced small-signal MOSFET technology allows for low on-resistance in a very small area, making it perfect for applications where power consumption is a priority. Its ability to switch and amplify digital signals make it beneficial for logic operations in digital circuits.

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