Allicdata Part #: | NTHD3100CT3G-ND |
Manufacturer Part#: |
NTHD3100CT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V CHIPFET |
More Detail: | Mosfet Array N and P-Channel 20V 2.9A, 3.2A 1.1W S... |
DataSheet: | NTHD3100CT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A, 3.2A |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 165pF @ 10V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
Base Part Number: | NTHD3100C |
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The NTHD3100CT3G is an N-Channel Trench MOSFET Array produced by Fairchild Semiconductor Corporation. The device is designed to introduce high speed switching, logic level shifting and signal buffering designed with maximum power efficiency, low on-state resistance and minimal switching losses. It is the perfect choice for use in applications that require high speed switching or signal bridging. It is also an excellent device for providing low on-state resistance and quiet switching operation.
The NTHD3100CT3G is a three-pin device that features three independent N-channel Trench MOSFETs with maximum ratings of 20V, 7A and an on-state resistance of 45mΩ. The NTHD3100CT3G is designed to have low gate-charge and provides superior dynamic ESD protection. The device has good thermal characteristics and is perfect for use in applications requiring low RDS(ON) and high output current as well as low gate drive power.
The main application field of the NTHD3100CT3G is in high-frequency switching such as switching power supplies, lighting, motor control, and USB power applications. The NTHD3100CT3G also provides the perfect alternative to bipolar transistors when used with resistive loads. The device also provides excellent protection features for overcurrent and short-circuit protection.
The working principle of the NTHD3100CT3G is based on MOSFET technology. MOSFETs use an insulated gate to control the flow of the current. The gate voltage will determine the amount of current that passes through the device. The NTHD3100CT3G is designed to provide greater control over the current flow and hence provide superior power efficiency and low on-state resistance. It also provides for low switching losses and improved performance in switching applications.
The NTHD3100CT3G is a highly efficient and reliable device that offers superior performance in switching applications. It provides high speed switching, logic level shifting and signal buffering with maximum power efficiency, low on-state resistance and minimal switching losses. It is the perfect choice for use in applications requiring minimal power and low switching noise. The NTHD3100CT3G is a great device for those needing maximum power efficiency and low on-state resistance in a single package.
The specific data is subject to PDF, and the above content is for reference
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