NTLUD3191PZTAG Allicdata Electronics
Allicdata Part #:

NTLUD3191PZTAG-ND

Manufacturer Part#:

NTLUD3191PZTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 1.1A 6UDFN
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 1.1A 500mW Sur...
DataSheet: NTLUD3191PZTAG datasheetNTLUD3191PZTAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-UDFN (1.6x1.6)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTLUD3191PZTAG is a recent addition to the world of transistors, and it is quickly becoming one of the most popular technologies in this field. It is classified as a FET array because it is made up of multiple transistors. Its design is made to be compact, efficient, and cost-effective, and its applications range from high-density logic and analog circuits to power switching and control.

The NTLUD3191PZTAG is a P-channel MOSFET that is available in 6V, 10.1V, and 20V versions with maximum drain current ranging from 200mA to 1000mA. It is a relatively small transistor with a length of 4.8mm and a width of 3.5mm, making it ideal for use in tight spaces. The FET array also has very low on-state resistance which aids in minimizing power dissipation. Furthermore, it has a low gate threshold voltage for reliable switching performance when used in its intended application.

The main benefit of the NTLUD3191PZTAG is its ability to save space in designs by reducing the number of transistors and other components needed to complete a circuit. Furthermore, its integrated circuit design ensures fuse protection and low EMI/RFI susceptibility, thus reducing interference and noise in the circuit. In addition, its wide drain-source voltage range makes it suitable for a variety of applications.

In terms of working principle, the NTLUD3191PZTAG operates on the same principles as most P-channel field-effect transistors. At the gate, a positive voltage relative to the source will cause the voltage drop between source and drain to increase, thus allowing more current to flow. As the gate-drain voltage increases, the drain current also increases proportionally. The voltage between gate and source is known as the ‘gate voltage’, while the voltage between source and drain is known as the ‘threshold voltage’. Once the threshold voltage is reached, the FET will switch fully on, allowing more current to flow.

The NTLUD3191PZTAG is thus an invaluable addition to the world of transistors, offering the best of both worlds in terms of size, cost-effectiveness and performance. With its wide versatility and applications, it is ideal for designs that require higher density logic and analog circuits, as well as for power switching and control.

The specific data is subject to PDF, and the above content is for reference

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