Allicdata Part #: | NTLUD3191PZTAG-ND |
Manufacturer Part#: |
NTLUD3191PZTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 1.1A 6UDFN |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.1A 500mW Sur... |
DataSheet: | NTLUD3191PZTAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 160pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UFDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
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NTLUD3191PZTAG is a recent addition to the world of transistors, and it is quickly becoming one of the most popular technologies in this field. It is classified as a FET array because it is made up of multiple transistors. Its design is made to be compact, efficient, and cost-effective, and its applications range from high-density logic and analog circuits to power switching and control.
The NTLUD3191PZTAG is a P-channel MOSFET that is available in 6V, 10.1V, and 20V versions with maximum drain current ranging from 200mA to 1000mA. It is a relatively small transistor with a length of 4.8mm and a width of 3.5mm, making it ideal for use in tight spaces. The FET array also has very low on-state resistance which aids in minimizing power dissipation. Furthermore, it has a low gate threshold voltage for reliable switching performance when used in its intended application.
The main benefit of the NTLUD3191PZTAG is its ability to save space in designs by reducing the number of transistors and other components needed to complete a circuit. Furthermore, its integrated circuit design ensures fuse protection and low EMI/RFI susceptibility, thus reducing interference and noise in the circuit. In addition, its wide drain-source voltage range makes it suitable for a variety of applications.
In terms of working principle, the NTLUD3191PZTAG operates on the same principles as most P-channel field-effect transistors. At the gate, a positive voltage relative to the source will cause the voltage drop between source and drain to increase, thus allowing more current to flow. As the gate-drain voltage increases, the drain current also increases proportionally. The voltage between gate and source is known as the ‘gate voltage’, while the voltage between source and drain is known as the ‘threshold voltage’. Once the threshold voltage is reached, the FET will switch fully on, allowing more current to flow.
The NTLUD3191PZTAG is thus an invaluable addition to the world of transistors, offering the best of both worlds in terms of size, cost-effectiveness and performance. With its wide versatility and applications, it is ideal for designs that require higher density logic and analog circuits, as well as for power switching and control.
The specific data is subject to PDF, and the above content is for reference
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