NTLUS3A18PZTAG Discrete Semiconductor Products |
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Allicdata Part #: | NTLUS3A18PZTAGOSTR-ND |
Manufacturer Part#: |
NTLUS3A18PZTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 8.2A 6UDFN |
More Detail: | P-Channel 20V 5.1A (Ta) 700mW (Ta) Surface Mount 6... |
DataSheet: | NTLUS3A18PZTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2240pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
Series: | µCool™ |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTLUS3A18PZTAG is a type of MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is single and used in various applications across different industries.
MOSFETs are transistors that use a thin layer of metal oxide as an insulation between the gate terminal and the channel. This insulation (relative to other transistor types) allows a MOSFET to handle significantly more electric charge, making it suitable for a variety of power applications. The NTLUS3A18PZTAG is designed to handle higher voltages and current loads than other types of MOSFETs.
The NTLUS3A18PZTAG is often used in switching power applications such as lighting and motor control. This type of MOSFET can also be used for amplifying weak signals and for audio applications, such as peak current limiting in amplifiers and crossover networks.
The working principle behind the NTLUS3A18PZTAG is relatively simple. When a voltage is applied to the gate terminal, the metal oxide layer begins to deplete, allowing current to flow between the drain and source. The amount of current that flows is dependent on the magnitude of the voltage applied to the gate terminal.
The NTLUS3A18PZTAG is capable of handling up to 30V maximum drain-source voltage, and up to 7.3A maximum drain current. The maximum junction temperature is 150˚C. The device has an on-resistance of 158mΩ and a threshold voltage of 2.6V. The device is rated for 153W at 25°C.
Overall, the NTLUS3A18PZTAG is a versatile, power efficient MOSFET that can be used in a variety of applications. Its ability to handle high voltages and current loads makes it ideal for switching power applications, such as lighting and motor control. The device is also suitable for audio applications, such as peak current limiting in amplifiers and crossover networks.
The specific data is subject to PDF, and the above content is for reference
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