Allicdata Part #: | NTLUS3A40PZCTAG-ND |
Manufacturer Part#: |
NTLUS3A40PZCTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 6.4A UDFN |
More Detail: | P-Channel 20V 4A (Ta) 700mW (Ta) Surface Mount 6-U... |
DataSheet: | NTLUS3A40PZCTAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 6.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTLUS3A40PZCTAG transistors are a type of field effect transistor (FET), specifically a single type of metal–oxide–semiconductor field-effect transistor (MOSFET). FETs are semiconductor devices that are similar to a regular transistor, but have an insulated control gate, which is used to apply an electric charge to a stream of electrons within their semiconductor material. This device is a N-channel MOSFET, meaning that it passes through electrons from the source to the drain in an N-shaped channel. It is designed for use in a variety of applications, including automotive, consumer, industrial, and telecom.
The NTLUS3A40PZCTAG is an ideal device for automotive applications. It has an incredibly low on-resistance, allowing for high current levels to flow through the body with minimal power loss. Its low gate threshold voltage ensures that the control voltage needed to switch the device is low and consistent. This device also offers a wide operating temperature range, making it suitable for automotive applications that are exposed to extreme temperatures. The robust package design ensures that the device is able to withstand vibration and physical systems even under extreme conditions.
The NTLUS3A40PZCTAG also has applications in consumer electronics. It offers an ultra-low on-resistance that allows for extremely high current levels to pass through the body with minimal power loss, making it ideal for use in consumer devices. It also has a low gate threshold voltage, meaning that the voltage needed to switch the device is extremely low and consistent, allowing for more efficient switching of the device. The ultra-low on-resistance also makes it suitable for use in SSDs, hard drives, and USB flash drives.
Industrial applications are also common for the NTLUS3A40PZCTAG. It is designed for use in high-current applications, and is ideal for DC-DC converters, solar inverters and motor control applications. Its low gate threshold voltage ensures that it can be adequately controlled with minimal voltage, while its low on-resistance allows for efficient power distribution. The robust package design is also ideal for industrial use, as it is able to withstand extreme vibrations and impacts without fail.
The NTLUS3A40PZCTAG is also suitable for use in telecom applications. It is designed for use in low-voltage and low-current applications, making it ideal for use in telecom equipment. Its robust package design and wide operating temperature range allow it to be used in a variety of telecom applications. Additionally, its low gate threshold voltage makes it ideal for use in low-power applications, ensuring that the device can be switched quickly and consistently.
The working principle behind the NTLUS3A40PZCTAG is based on the idea of an insulated-gate field-effect transistor. The source and drain terminals are connected to a stream of electrons within the semiconductor material. The insulated gate is held at a controlled voltage, which is used to control the flow of electrons from source to drain. If the voltage is at a high enough level, the electrons will be able to flow through the device, allowing current to pass. If the gate voltage is lowered, the electrons will be less able to pass, which would result in a breakdown of the channel, blocking current flow.
In conclusion, the NTLUS3A40PZCTAG is an ideal transistor for a variety of applications, including automotive, consumer, industrial, and telecom. It is an N-channel MOSFET, which provides a low on-resistance and low gate voltage, making it suitable for many types of applications. Its working principle is based on the insulated-gate, field-effect transistor, which allows the device to be controlled using a controlled gate voltage.
The specific data is subject to PDF, and the above content is for reference
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