NTLUD3A260PZTBG Discrete Semiconductor Products |
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Allicdata Part #: | NTLUD3A260PZTBGOSTR-ND |
Manufacturer Part#: |
NTLUD3A260PZTBG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 1.3A UDFN6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.3A 500mW Sur... |
DataSheet: | NTLUD3A260PZTBG Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UFDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs (field effect transistors) are one of the most important components in modern electronics. Through the manipulation of the electrical fields, FETs control the switching of current, which makes them highly useful for a variety of applications. The NTLUD3A260PZTBG is a unique FET that is specifically designed for distributed systems architectures, making it attractive for embedded applications.
The NTLUD3A260PZTBG belongs to the class of power MOSFET arrays, which are sets of transistors working together to control the flow of current in a distributed system. This type of FETarray is often used in the field of automotive electronics, and due to the high degree of integration it offers, it can generate enough current to power even the largest of engines.
The NTLUD3A260PZTBG features a combination of what are known as vertical and lateral MOSFETs, which allow it to generate more power than a typical MOSFET. The transistor itself is constructed from a number of metal-oxide-semiconductor (MOS) materials, including polysilicon, and it is organized in a "staggered" manner. The staggered pattern of the NTLUD3A260PZTBG helps it to produce a higher peak power density than other MOSFETs, allowing it to drive even the most demanding automotive applications.
Despite the increased peak power, the NTLUD3A260PZTBG is still highly efficient when it comes to power consumption, making it attractive for applications that require long life times and maximum reliability. The FETs are available in both N-Channel and P-Channel versions, making them suitable for use in a wide range of distributed systems.
The main advantage of the NTLUD3A260PZTBG is its ability to provide high power in a small package, which helps to reduce the size of the overall system. The design also reduces the number of components needed to create a distributed system, which can help to reduce costs. In addition, the NTLUD3A260PZTBG has the ability to efficiently dissipate heat, making it a suitable choice for applications that operate in harsh environments.
Overall, the NTLUD3A260PZTBG is an ideal choice for distributed systems that require high performance and reliability. Its small size and high power density allow it to deliver the necessary power in a small package, while its low power consumption helps to reduce the cost and complexity of the overall system. With its ability to withstand extreme conditions, the NTLUD3A260PZTBG is a cost-effective solution for a wide range of distributed systems.
The specific data is subject to PDF, and the above content is for reference
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