NTLUS3C18PZTBG Allicdata Electronics
Allicdata Part #:

NTLUS3C18PZTBG-ND

Manufacturer Part#:

NTLUS3C18PZTBG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 12V 4.4A 6UDFN
More Detail: P-Channel 12V 4.4A (Ta) 660mW (Ta) Surface Mount 6...
DataSheet: NTLUS3C18PZTBG datasheetNTLUS3C18PZTBG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 6-PowerUFDFN
Supplier Device Package: 6-UDFN (1.6x1.6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTLUS3C18PZTBG is a 25 Volt, N-channel MOSFET which belongs to a common family of transistors called field effect transistors. Field effect transistors are a type of transistor which rely on an electric field to control the current flow through them. The NTLUS3C18PZTBG is specifically a single FET, also known as a single transistor device.

The NTLUS3C18PZTBG can be used in many different applications where it is necessary to control and regulate the current flow between two points. This could be in a circuit designed to control the voltage in a power supply, amplify a signal, or to switch the circuit between two states. The NTLUS3C18PZTBG is particularly well-suited for use in logic circuits, due to its high switching speed and ability to handle higher currents than other types of transistors.

The working principle of the NTLUS3C18PZTBG is based on the flow of electrons through the transistor. The NTLUS3C18PZTBG is an N-channel MOSFET, which means the current flows through an N-type substrate and not a P-type substrate. When a small voltage is applied to the gate of the transistor, a voltage is induced in the substrate material which creates a channel of electrons across the gate. This channel of electrons allows the current to flow between the source and the drain of the transistor.

The NTLUS3C18PZTBG can be used in a variety of applications, such as in logic circuits, switch circuits, power supplies and amplifying signals. It can be used to control the voltage in power supplies, switch a circuit between two states, or amplify a signal. By controlling the voltage applied to the gate of the MOSFET, it is possible to control the amount of current that it allows to flow through it. This makes it an ideal component for use in circuits where precise control of current is necessary.

In conclusion, the NTLUS3C18PZTBG is a 25 Volt, N-channel MOSFET that is used in a variety of circuits where precise control of current is necessary. It relies on an electric field to control the current flow through it, and has a wide range of applications in logic circuits, switch circuits, power supplies and signal amplifying circuits. By controlling the voltage applied to its gate, the NTLUS3C18PZTBG can control the amount of current that it allows to flow through it, making it an ideal component for use in various circuit designs.

The specific data is subject to PDF, and the above content is for reference

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