NTLUD3A50PZTAG Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.8A
Rds On (Max) @ Id, Vgs:	50 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	920pF @ 15V
Power - Max:	500mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	6-UDFN (2x2)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The NTLUD3A50PZTAG is a transistor array with ingenious design and versatile features, which is favored by many people in industry and research. This transistor array is contained with a N-channel enhancement mode MOSFET with logic level low threshold, allowing Fast Switching and Low On-state resistance for improved trigger control. This N-channel MOSFET has many application fields that require switching and driving capabilities, such as DC-DC converters, fault protection and LED/solar cell applications. Further, as a MOSFET, it contains many advantages such as low-voltage drive, low on-resistance, and low gate charge, which further makes it a strong candidate for further application and research.

Overview

The NTLUD3A50PZTAG is a high-power transistor array contained within a four-pin TO-252-3L plastic surface mount package, featuring a P-channel enhancement MOSFET flanked by two N-channel enhancement MOSFETs. It has a typical ratings of -20V drain to source voltage (VDS), -50V gate to source voltage (VGS), 12A drain current (ID), and is capable of withstanding up to 1150C junction temperature, making it suitable for many industrial and scientific application fields. Further, it has a low threshold voltage of 1.7V, which is useful for many low-voltage applications.

Working Principle

The NTLUD3A50PZTAG utilizes a N-channel MOSFET, which is a voltage-assisted device that relies on current-carrying capabilities to facilitate the flow of current across a certain object. In this transistor array, the Drain, Gate and Source all have their characteristic roles that affect the overall performance of the device. The Drain is connected to the object that requires transference of current, which applies voltage across the Gate and Source, through what is known as ‘channel depletion’. This channel depletion pushes electrons across the transistor array, allowing for current flow at a certain level dictated by the voltage on the Gate. The Source is then connected to a source of current, and is used to complete the current loop. By understanding the working principle of the device, it can be seen that the NTLUD3A50PZTAG is highly advantageous for many applications. It provides for Fast Switching and Low On-state resistance for improved trigger control, which can be very useful in industrial and scientific applications. Due to its design and capabilities, it is observed as a good choice for DC-DC converters, fault protection and LED/solar cell applications.

Conclusion

Over time, the NTLUD3A50PZTAG has become a popular choice for many application fields, thanks to its low-voltage drive, low on-resistance and low gate charge features. The TO-252-3L package is ideal for surface mounting, and its -20V drain to source voltage (VDS), -50V gate to source voltage (VGS) and 12A drain current (ID) make it suitable for industrial and scientific use. With its fast switching capabilities and low on-state resistance, it has been observed as a great choice for DC-DC converters, fault protection and LED/solar cell applications, making it a strong candidate for further research and application.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description