NTLUS3A90PZTAG Discrete Semiconductor Products |
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Allicdata Part #: | NTLUS3A90PZTAGOSTR-ND |
Manufacturer Part#: |
NTLUS3A90PZTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 2.6A 6UDFN |
More Detail: | P-Channel 20V 2.6A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | NTLUS3A90PZTAG Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-PowerUFDFN |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 12.3nC @ 4.5V |
Series: | µCool™ |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTLUS3A90PZTAG is a 3A, 90V, single-channel, N-channel power MOSFET produced by Renesas Electronics. It is commonly used in Switching applications and has found many applications in consumer electronics, automotive, telecom and computer circuits. In this article, we will take a look at the applications and working principles of the NTLUS3A90PZTAG.
As a High-Voltage and High-Current single-channel switch, the NTLUS3A90PZTAG is fast and cost-effective solution in many different applications. It can be used as a low side switch in hot-swap switch applications, motor and relay control, as a voltage clamping device in battery protection circuits, as a low impedance path in AC power line filtering, and in synchronous rectification. It is also commonly found in reverse-level triggering, such as in current limit control, and overcurrent protection.
The NTLUS3A90PZTAG has an integrated protection Schottky diode to ensure that voltage spikes will not damage the Gate-to-Source channel when switching. The device is rated at 3A and 90V, and is suitable for applications that require high power switching of loads consuming up to 3A of current. The NTLUS3A90PZTAG also has a Very Low RDS(on) (Drain-Source on-state resistance) of 1.4 mOhm, which ensures efficient switching of loads. The device features a VDSS (Drain-Source Voltage) of 100V and a Gate-Threshold voltage of 2V.
The NTLUS3A90PZTAG uses the Insulated Gate Field-Effect Transistor (IGFET) technology. A MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) is a voltage-controlled, self-latching device that can be used as a switch and to amplify signals. NTLUS3A90PZTAG is an N-channel MOSFET, which means that the Gate terminal can control the voltage flow between the Drain and Source. When the Gate is not driven, the Drain-Source channel is open, and there is no flow of current. When voltage is applied to the Gate terminal, the Drain-Source channel is closed and current can flow from Drain to Source.
The NTLUS3A90PZTAG is also a Protected MOSFET, which means it has an integrated protection Schottky diode. This diode provides additional protection against voltage spikes and transients, and also prevents the formation of reverse-biasing junction diodes.
The NTLUS3A90PZTAG is a high-performance and versatile MOSFET that is ideal for high-current switching applications, where efficiency, fast switching, and low cost are of utmost importance. Its integrated protection Schottky diode ensures that voltage spikes and transients will not damage the device, and its Very Low RDS(on) provides efficient switching of loads up to 3A.
The specific data is subject to PDF, and the above content is for reference
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