NTLUS4195PZTBG

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	6-PowerUFDFN
Supplier Device Package:	6-UDFN (1.6x1.6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	600mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	90 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The NTLUS4195PZTBG is an enhancement-mode, low voltage N-channel MOSFET (metal-oxide semiconductor field effect transistor). It is specially designed for use in Power Management applications, specifically high-performance DC-to-DC converters for communication, computing and consumer platforms. This single MOSFET provides low on-resistance, fast switching, excellent temperature stability and ESD protection.

Application Field

The NTLUS4195PZTBG’s application field includes but is not limited to:1. Power Management: The NTLUS4195PZTBG provides precisely controlled power solutions, allowing lower system cost and smaller overall form factors. It is suitable for high-current, high-frequency converters, load switches and PWM control functions.2. DC-to-DC Converters: NTLUS4195PZTBG is an ideal solution for use in DC-to-DC converters, providing excellent efficiencies and minimal losses.3. General Purpose Switching: The NTLUS4195PZTBG can be used for a wide variety of general-purpose switching applications, as it provides very low conduction losses and high switching performance.

Working Principle

The NTLUS4195PZTBG is a single example of an enhancement-mode, low voltage N-channel MOSFET, which operates on the principle of applying a voltage between the gate and source to control the current flow between the drain and the source. The charge carriers are typically electrons, although MOSFETs with holes (p-type devices) are also available.When the gate-to-source voltage (VGS) of an N-channel MOSFET is below the threshold voltage (Vth), the MOSFET is in the off-state, and little or no current flows between the drain and the source. However, when the drain-to-source voltage (VDS) of an N-channel MOSFET is greater than VGS, a current automatically starts flowing from the drain to the source. This is known as the “pinch-off” region and the MOSFET behaves like a closed switch, allowing current to flow from the drain to the source.The NTLUS4195PZTBG has a very low on-resistance of just 1.1 Ohm and a very low threshold voltage of just 0.9 V. This makes it an ideal solution for a variety of applications requiring low voltage power management. Additionally, it has an excellent temperature stability and ESD protection.

Conclusion

The NTLUS4195PZTBG is an ideal solution for application fields such as Power Management, DC-to-DC converters and general purpose switching. It offers low voltage performance due to its low on-resistance and low threshold voltage, temperature stability and ESD protection. It operates on the principle of applying a voltage between the gate and source to control the current flow between the drain and the source.

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