Allicdata Part #: | NTLUS4930NTBG-ND |
Manufacturer Part#: |
NTLUS4930NTBG |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 6.3A UDFN6 |
More Detail: | N-Channel 30V 3.8A (Ta) 650mW (Ta) Surface Mount 6... |
DataSheet: | NTLUS4930NTBG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.25358 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 650mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 476pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28.5 mOhm @ 6.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTLUS4930NTBG is a field effect transistor that operates through a number of physical principles that allow it to regulate electric current flowing through a circuit. Generally, FETs are used in linear, switch, or noise-attenuating applications, allowing an incredibly small signal voltage to regulate a current as high as hundreds of amperes. With a low noise level and high linearity, this device can be used in a wide range of applications in which signal quality and a broad frequency response are important. In this article, we will look at how the NTLUS4930NTBG works, the general application field it can be used in, and some of the specifics associated with its operating parameters.
At its core, the NTLUS4930NTBG is a depletion-type MOSFET. It is composed of a single layer of junction diodes, which act as a switch to control the flow of current through the device. The layer of junction diodes works in tandem with charge redistribution to regulate the amount of current flowing through the FET. When the gate voltage of the device is thickened up, it produces a negative charge on the substrate and a positive charge on the gate, creating an electric field between them. This electric field keeps the junction diode from carrying electric current, resulting in the current being cut off. When the gate voltage drops below a certain threshold, the electric field disappears, allowing current to flow.
The NTLUS4930NTBG has a wide variety of applications that are divided into two categories: linear applications and switch applications. In linear applications, the FET can be used to control and maintain low voltage levels between two circuits, making it ideal for sensitive electronics or audio equipment. Switch applications, on the other hand, allow the FET to rapidly switch between states, making it useful for switching operations in digital circuits or high-speed operations. The FET can also be used in noise-attenuating applications, such as radio frequency amplifiers, where it can filter out extraneous frequencies.
In addition to its application versatility, the NTLUS4930NTBG has several characteristics that contribute to its functionality. It is designed with a very low gate charge, which reduces the amount of current needed to activate the FET and also helps to reduce noise levels. It also features a low gate-to-source capacitance, allowing it to switch faster than traditional FETs. Lastly, its drain output capacitance is extremely low, allowing it to be used in high power applications as well as in low power applications.
The key to understanding the NTLUS4930NTBG is its ability to provide a high level of control and accuracy in regulating the flow of electric current. Perhaps the most important feature of this FET is its low noise level and high linearity, which makes it ideal for a wide variety of applications where noise levels and signal integrity are of the utmost importance. Its small size and wide operating parameters also make it a great choice for applications requiring a low power consumption, making it a great choice for engineers who are looking for an efficient, reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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