NTLUS3A90PZTBG

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-PowerUFDFN
Supplier Device Package:	6-UDFN (1.6x1.6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	600mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	12.3nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	62 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to NTLUS3A90PZTBG

The NTLUS3A90PZTBG is a single equivalent field effect transistor (FET). FETs are a type of transistor that control electrical signals. They work by creating a difference in electrical potential between two contacts – a source and a drain – and a third contact called a gate. The NTLUS3A90PZTBG is a type of FET referred to as a metal–oxide–semiconductor field-effect transistor (MOSFET). This MOSFET has an improved temperature stability and long-term reliability as compared to other types of FETs, making it a suitable device for applications requiring a high level of performance.

Application Field of NTLUS3A90PZTBG

The NTLUS3A90PZTBG is a reliable and efficient device that is suitable for applications across multiple industries. It can be used in power management, audio applications and data communication devices. Some examples of its usage include switching, amplification and protection circuits. It is also suitable for applications where low power dissipation, low on-resistance, low gate charge and high input-impedance are desired.

Working Principle of NTLUS3A90PZTBG

The working principle of the NTLUS3A90PZTBG is based on the MOSFET structure. A basic MOSFET consists of three terminals – the source (or drain), the gate and the drain (or source). The NTLUS3A90PZTBG includes additional features to improve its performance, such as a built-in diode circuit and an optimized gate oxide layer. In operation, the gate terminal is held at a particular voltage, known as the gate voltage. This voltage can be either positive or negative. If the gate voltage is positive, it attracts a layer of electrons from the substrate below it, known as the inversion layer. This inversion layer acts as a semiconductor, allowing current to flow between the source and drain. If the gate voltage is negative, it repels electrons from the inversion layer, blocking current flow and effectively switching off the device. As current flows through the inversion layer, the internal resistance of the device increases. This increase in resistance is known as the transconductance, and is one of the key characteristics of the NTLUS3A90PZTBG. The other key characteristic is the input capacitance, which can vary depending on the gate voltage. By controlling the voltage applied to the gate, it is possible to vary the resistance of the device, allowing the NTLUS3A90PZTBG to be used as an adjustable resistor.

Conclusion

The NTLUS3A90PZTBG is a single equivalent FET suitable for applications requiring a high level of performance. It is an MOSFET with improved temperature stability and long-term reliability, making it suitable for applications such as power management, audio applications and data communication devices. Its working principle is based on the MOSFET structure, and it includes additional features such as a built-in diode circuit and an optimized gate oxide layer. By controlling the gate voltage, the internal resistance of the device – known as the transconductance – can be varied, allowing the NTLUS3A90PZTBG to be used as an adjustable resistor.

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