Allicdata Part #: | NTLUF4189NZTBG-ND |
Manufacturer Part#: |
NTLUF4189NZTBG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.2A 6UDFN |
More Detail: | N-Channel 30V 1.2A (Ta) 500mW (Ta) Surface Mount 6... |
DataSheet: | NTLUF4189NZTBG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-UFDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 95pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTLUF4189NZTBG is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in a variety of applications. It is a single N-Channel MOSFET with a maximum current handling capacity of 40A and a gate-source breakdown voltage (Vgs) of 60V. It is suitable for use in high-voltage, high-current applications such as power supplies and motor control.
The NTLUF4189NZTBG is designed to be used in many different applications such as power controllers, inverters, DC-DC converters, and in many other power management circuits. It is also suitable for use in lighting applicants where its high current capability can be beneficial. Additionally, this device can be used in logic-level applications where the high gate-source voltage and low on-resistance can be of advantage.
Working principle
MOSFETs, like all transistors, rely on the flow of electrons or holes from a region of higher voltage – the source – to a region of lower voltage – the drain. This flow is typically facilitated by an electric gate which is inversely proportional to the voltage applied, that is, the higher the voltage, the lower the gate voltage, and visa versa. This is the basis behind the working principle of the NTLUF4189NZTBG.
When a potential difference is applied between the gate and the source of the NTLUF4189NZTBG, an inversion layer is formed in the body region. This inversion layer is formed by drawing electrons out of the body region, a process called “inversion”. Once the electrons are pulled out of the body region, holes are created in the body region. These holes are pulled to the gate electrode and thus, create an electric field in the body region and drain. This electric field creates a current flow from the source to the drain.
The maximum current that can flow through the device is limited by the amount of gate voltage (Vgs) applied. The higher the Vgs, the higher the current that can flow through the device. The NTLUF4189NZTBG is designed to protect against excessive gate voltage and current, so the user does not have to worry about damaging the device if proper precautions are taken.
The NTLUF4189NZTBG’s working principle is simple and therefore, can be used in a variety of applications. It is a reliable device and can be used in power efficient applications, power controllers, and inverters.
The specific data is subject to PDF, and the above content is for reference
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