Allicdata Part #: | NTLUS3A39PZCTBG-ND |
Manufacturer Part#: |
NTLUS3A39PZCTBG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 5.2A UDFN6 |
More Detail: | P-Channel 20V 3.4A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | NTLUS3A39PZCTBG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-PowerUFDFN |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10.4nC @ 4.5V |
Series: | µCool™ |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A NTLUS3A39PZCTBG is a type of Field-Effect Transistor (FET), more specifically, a Metal–oxide–semiconductor FET (MOSFET). It is a single-gate device, meaning it contains only one insulated gate. It is designed to increase efficiency in applications such as amplifiers and switching circuits, through the internal amplification of power.
The NTLUS3A39PZCTBG is characterized by its current and voltage ratings. It can handle a maximum current of 28A and a maximum voltage of 60V. In terms of power, the NTLUS3A39PZCTBG can withstand up to 1.68 Watts. It is able to do this because it has an on-state resistance of 13 milliohm.
This type of MOSFET is commonly used in switching regulator applications. It contains an integrated body diode, which helps protect the MOSFET from damage that can occur when it is subjected to reverse voltage. This makes it a preferred choice for applications with variable input voltages.
The NTLUS3A39PZCTBG also works well as an amplifier, due to its low-noise operation, which helps reduce distortion of audio signals. It is also capable of driving high current DC motors, making it a great choice for robotics projects. It can be used in other applications as well, such as in robotics joints and actuation.
The working principle of the NTLUS3A39PZCTBG lies in its three layers: the gate, the body, and the source. The gate is a controlled terminal and is used to modulate the current through the channel by controlling the voltage drop across the channel. The body, or substrate, lies underneath the gate and can be permanently charged or discharged. The source connects the body to the gate and also connects to the drain terminal.
When the voltage across the gate is increased, the current flows through the channel more readily, allowing more charge to move from the source to the drain. This, in turn, increases the current flow through the device, allowing for enhanced efficiency in operation. On the other hand, when the voltage across the gate is decreased, there is less current flow, providing less efficiency in operation.
The NTLUS3A39PZCTBG has many advantages, such as high efficiency, low noise, low power consumption, low on-state resistance, and low cost. This makes it an excellent choice for applications requiring a high level of efficiency and a low level of power consumption. It is also small and lightweight, making it easy to integrate into small devices and applications.
In summary, the NTLUS3A39PZCTBG is a type of Field-Effect Transistor, more specifically, a Metal–oxide–semiconductor FET (MOSFET). It can handle high currents and voltages, making it a great choice for switching regulator applications and amplifiers, as well as robotics projects. It works by varying the voltage applied to its gate terminal, which alters the current flow through the device, allowing for greater efficiency. It features low noise operation, low power consumption and a low on-state resistance, making it an ideal choice for applications that need enhanced efficiency and a low level of power consumption.
The specific data is subject to PDF, and the above content is for reference
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