Allicdata Part #: | NTLUS3A18PZCTCG-ND |
Manufacturer Part#: |
NTLUS3A18PZCTCG |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 8.2A UDFN |
More Detail: | P-Channel 20V 5.1A (Ta) Surface Mount 6-UDFN (2x2... |
DataSheet: | NTLUS3A18PZCTCG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15758 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-UDFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2240pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTLUS3A18PZCTCG is a single N-channel Metal Oxide Field Effect Transistor (MOSFET), developed and manufactured by ON Semiconductor. It is offered in the package TO-263FA, and is designed to be employed in a variety of practices, and environments. It features a high current capability and low drain-source resistance, as well as an increased input capacitance due to its integrated gate structure.
The NTLUS3A18PZCTCG is suitable for use in controlling the power of a system or device in a variety of applications. It can be successfully applied in extremely high-temperature systems, or in systems that are exposed to high levels of voltage. It is an excellent choice for power management and control in applications such as computers, tablets, smart TVs, and other consumer electronics.
NTLUS3A18PZCTCG is a voltage-controlled Class C MOSFET, which means that the transistor can be turned “on” and “off” depending on a predetermined input voltage threshold. This threshold is typically set by the gate of the MOSFET, but can also be set through the source voltage, making this particular MOSFET an outstanding choice for applications that require precision switching.
It features a low RDS(on), meaning that it has high “on” resistance, On the other hand, the NTLUS3A18PZCTCG is subject to non-linear performance due to its integrated gate structure, meaning that its current draw is not perfectly linear. This is something to keep in mind when designing a circuit that uses the NTLUS3A18PZCTCG.
In terms of power handling capability, the NTLUS3A18PZCTCG can handle up to 7.2 watts of continuous current at a drain-source voltage of 12 volts. This makes it an excellent choice for applications that require reliable and efficient switching or power management. In addition, the transistor’s high thermal resistance makes it suitable for systems that operate in high temperature environments.
In conclusion, the NTLUS3A18PZCTCG is an excellent choice for applications requiring power management and switching. It features a high current capability, low drain-source resistance, and increased input capacitance, along with a high resistance to thermal overload. It can also handle up to 7.2 watts of continuous current at 12 volts of drain-source voltage, allowing for reliable power control in a variety of applications. With its integrated gate structure and voltage-controlled design, the NTLUS3A18PZCTCG is a great choice for power management solutions.
The specific data is subject to PDF, and the above content is for reference
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