Allicdata Part #: | NTLUS3A39PZTAG-ND |
Manufacturer Part#: |
NTLUS3A39PZTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 5.2A 6UDFN |
More Detail: | P-Channel 20V 3.4A (Ta) 600mW (Ta) Surface Mount 6... |
DataSheet: | NTLUS3A39PZTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-PowerUFDFN |
Supplier Device Package: | 6-UDFN (1.6x1.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10.4nC @ 4.5V |
Series: | µCool™ |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTLUS3A39PZTAG is a p-channel enhancement mode MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) designed for Automotive and battery management applications. This FET is ideal for use in low-voltage battery-powered switch applications such as those found in closed loop systems and high-side switches to control system loads in power circuits. This FET is designed to handle applications requiring low RDSon and gate charge.
Feature
- Rated at 30 VDS
- RDSon is 0.139 Ω @ 10 VGS
- Gate charge is 6.1 nC
- Operating temperature rated for -55°C to +150°C
- Operates in logic level Mode
Applications
- Power Line Switching
- High Side Switching
- Switching Regulators
- Battery Management
- Closed Loop Systems
Working Principle
The NTLUS3A39PZTAG is a three-terminal MOSFET. The source (S) terminal acts as a current reservoir and the drain (D) terminal is the output terminal. The body or substrate of the MOSFET is electrically isolated from the source and drain terminals and is generally connected to the source terminal. The gate (G) terminal is used to control current through the device. When the gate-to-source voltage (VGS) is low, the MOSFET is OFF and no current flows through the device. When VGS is raised to the threshold voltage, current begins to flow through the channel and the device is turned ON.
The NTLUS3A39PZTAG is an enhancement mode MOSFET which requires a positive VGS to turn ON. The voltage applied to the gate terminal must remain positive relative to the source terminal. When the voltage is removed from the gate terminal, current will stop flowing through the device and it will turn off.
The NTLUS3A39PZTAG is a low RDSon MOSFET, meaning that it has a low resistance when current is flowing through the device. This is beneficial for efficiency as it allows for lower power losses. Additionally, the FET has a low gate charge, meaning that the charge required to turn the device ON is also low. This makes it easier to control the device, as the voltage applied to the gate can be controlled more precisely.
The NTLUS3A39PZTAG is rated for an operating temperature range of -55°C to +150°C and can be used in automotive and battery management applications. This makes it suitable for a wide range of applications where a low-voltage, low-power switching device is needed.
The specific data is subject to PDF, and the above content is for reference
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