NVATS4A101PZT4G Allicdata Electronics
Allicdata Part #:

NVATS4A101PZT4G-ND

Manufacturer Part#:

NVATS4A101PZT4G

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CHANNEL 30V 27A ATPAK
More Detail: P-Channel 30V 27A (Ta) 36W (Tc) Surface Mount ATPA...
DataSheet: NVATS4A101PZT4G datasheetNVATS4A101PZT4G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.23858
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: ATPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 36W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 30 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVATS4A101PZT4G is a fast switching enhancement mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) housed in a 4-pin TO-252 package. This MOSFET is suitable for use in various applications, notably those involving high switching speed and high current carrying capability.

MOSFETs enable the flow of current in response to a voltage capacitor. An enhancement MOSFET is designed to remain in an “off” state, with no conduction until a positive voltage is applied to the gate terminal, at which point conduction can occur. This particular device is capable of withstanding exceptionally high voltage, making it suitable for use in applications requiring high power levels.

The NVATS4A101PZT4G is an N-channel device with a drain current of 2.2A, a drain-source breakdown voltage of 60V, an on-resistance of 3.2Ω and an on-resistance temperature coefficient of +1V/ºC. Its high switching speed enables it to handle high frequency, high power applications.

The device requires a single supply for operation, making it ideal for use in space-constrained applications. For optimum performance, it features Symmetrical Gate Charge Characteristics and fast rise and fall times. It has a high dV/dt rejection rate, making it suitable for use in high voltage, high noise environments.

The NVATS4A101PZT4G has a wide range of applications, including DC-DC converters, step down regulators, interfacing circuits for peripheral devices, motor control applications and switching power supplies. Its popularity is due to its ruggedness and its ability to handle high switching speeds and voltages with ease.

The device is relatively easy to use and understand. It has an intuitive design with an integrated gate driver and can be conveniently incorporated into any circuit without having to go through the time-consuming process of learning a complex and expensive integrated circuit architecture. In addition to its convenience, the device also offers cost-effectiveness.

The NVATS4A101PZT4G is an extremely reliable device for use in power switching applications. Its high dV/dt rejection rate makes it ideal for use in noisy environments and its fast switching speed makes it perfect for applications involving high power levels. It is a cost-effective and reliable solution that can be easily integrated into any existing circuit.

The specific data is subject to PDF, and the above content is for reference

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