NVATS5A112PLZT4G Discrete Semiconductor Products |
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Allicdata Part #: | NVATS5A112PLZT4GOSTR-ND |
Manufacturer Part#: |
NVATS5A112PLZT4G |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CHANNEL 60V 27A ATPAK |
More Detail: | P-Channel 60V 27A (Ta) 48W (Tc) Surface Mount ATPA... |
DataSheet: | NVATS5A112PLZT4G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29445 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVATS5A112PLZT4G is a common-source N-channel enhancement mode power MOSFET which is a type of field effect transistor (FET). It is also a non-polar device with RoHS compliant terminals for use in a variety of applications. To understand how the MOSFET works, it is useful to understand the basics of how FETs operate.
A FET is an electronic device that uses an electric field to control current flow. It works by allowing the voltage applied across characteristics of the device to control the current flow. The control of current flow is a function of the gate-to-source voltage (VGS). The FET is made up of three terminals: gate, drain, and source. In an N-channel FET, the gate serves as a control voltage region, whereas the source and drain make up the conduction channel. As the gate voltage is increased, the current transfer capability of the device increases, allowing for efficient control of current flow.
The NVATS5A112PLZT4G features a maximum drain-source on-state resistance of 5.2 ohms, a maximum drain current of 1.2A (6.4A pulsed), a maximum drain-source voltage of 180V, and a gate-source cutoff voltage of -4V. It is designed with a maximum total gate charge of 7.5nC and a maximum gate-source voltage of -12V, making it ideal for use in applications that require a fine degree of control over the voltage and current flow of the device.
This FET can be used in a wide variety of applications, ranging from high-side switch applications to DC/DC converters, and low power audio amplifiers to appliance control and timing circuits. Additionally, this FET can also be used in automotive applications, as it is rated for operation to temperatures as low as -55°C.
As one of the most popular FETs on the market, the NVATS5A112PLZT4G is an ideal choice for applications that require a high degree of accuracy, reliability, and efficiency. Thanks to its superior electrical and thermal characteristics, the NVATS5A112PLZT4G is able to provide efficient and reliable power conversion for numerous applications.
The specific data is subject to PDF, and the above content is for reference
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