NVATS5A113PLZT4G Allicdata Electronics
Allicdata Part #:

NVATS5A113PLZT4G-ND

Manufacturer Part#:

NVATS5A113PLZT4G

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CHANNEL 60V 38A ATPAK
More Detail: P-Channel 60V 38A (Ta) 60W (Tc) Surface Mount ATPA...
DataSheet: NVATS5A113PLZT4G datasheetNVATS5A113PLZT4G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.40156
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: ATPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 29.5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NVATS5A113PLZT4G is a type of transistor, specifically a single field effect transistor (FET). It belongs to the FET family of transistors, which are the main components in many electronic designs. FETs are used to control current flow from one point to another in a circuit, and are the foundational element of digital circuits.

The NVATS5A113PLZT4G is a particular type of FET known as a metal–oxide–semiconductor FET (MOSFET). They are used for switching and for amplifying electronic signals. The NVATS5A113PLZT4G features high input impedance and high voltage tolerance, this makes it more suitable for use in digital circuits, like logic gates. Its main purpose is to provide the means to connect or disconnect different parts of the circuit, or decrease the current flowing through it.

The NVATS5A113PLZT4G is a n-type (also known as enhancement-mode) FET with both drain and source pins on a single rail, and a gate connected to the control voltage. The advantage of this configuration is that the n-type FET can both act as a switch and as a resistor between its source and drain. When the gate is charged, the p-n junction is inverted, and current can flow freely between the source and drain pins. When no charge is applied to the gate, the junction is closed, and current is blocked from the source to the drain.

Another feature of the NVATS5A113PLZT4G that makes it an attractive choice for digital electronic designs is its low power dissipation. Low power dissipation means that, for any given voltage, the FET dissipates less heat, which in turn leads to improved efficiency and less cooling requirements.

The NVATS5A113PLZT4G is ideal for use in applications with high voltage, such as power converters, motor control, and high voltage amplifiers. It is also used in automotive applications, and a range of consumer electronics such as cell phones and televisions. The FET is also used in the aerospace industry due to its high temperature tolerance and low power dissipation.

The major application sectors of the NVATS5A113PLZT4G FET include but are not limited to automotive, industrial, and consumer electronics. Its most common use is as a switch in digital circuits, as it can quickly and accurately control the flow of electrons between two points. Its low power dissipation also makes it ideal for use in high-power circuits, such as motor controllers and power amplifiers.

In summary, the NVATS5A113PLZT4G is a single field effect transistor that is ideal for use in high voltage applications. It can act as a switch, as a resistor, and can dissipate very low amounts of power. Its main purpose is to provide the means to connect or disconnect different parts of the circuit, or decrease the current flowing through it. Because of its ability to quickly and accurately control the flow of electrons, the NVATS5A113PLZT4G is a popular choice for digital circuits, as well as for high-power applications such as motor controllers and power amplifiers.

The specific data is subject to PDF, and the above content is for reference

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