Allicdata Part #: | NVATS4A102PZT4G-ND |
Manufacturer Part#: |
NVATS4A102PZT4G |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CHANNEL 30V 44A ATPAK |
More Detail: | P-Channel 30V 44A (Ta) 48W (Tc) Surface Mount ATPA... |
DataSheet: | NVATS4A102PZT4G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29445 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVATS4A102PZT4G is a n-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in low-power applications such as battery-powered electronics. MOSFETs are a type of field-effect transistor (FET) which, unlike standard bipolar transistors, can be designed with a wide range of channel materials and voltages, making them a versatile component for many applications. In this article, we will discuss the application field and working principle of the NVATS4A102PZT4G.
Application Field
The NVATS4A102PZT4G is especially suited for low power applications such as controlling LED lights or switching low-current signals. Its low thresholds make it an ideal component for low-voltage circuitry, and its low on-resistance, low threshold voltage, and low capacitance make it suitable for use in small, portable devices such as those powered by batteries. Furthermore, its low-voltage on-state characteristics make it an ideal component for motor driving circuits and constant-current applications like buzzers and solenoid valves. Finally, its low threshold voltage makes it an ideal component for signal conditioning applications such as amplifier driver stages and filtering circuits.
Working Principle
The working principle of the NVATS4A102PZT4G is based on the operation of a basic MOSFET. The device consists of three terminals: a source, drain, and gate. The source and gate are connected to opposite ends of a n-type silicon semiconductor material, while the drain is connected to the other side. When a voltage is applied to the gate, it induces an electric field between the source and drain that allows current to flow through the channel. The amount of current that can flow is directly proportional to the voltage applied to the gate.
TheNVATS4A102PZT4Ghas a low threshold voltage, which means that even low voltages can cause it to switch on (or off). This makes it an effective component for low-power applications such as switching low-current signals. The device also has a low on-state resistance, which means it can pass large currents while dissipating very little power. Finally, its low capacitance make it suitable for use in amplifier driver stages or filtering circuits.
The NVATS4A102PZT4G is a versatile component for many low-power applications. It is ideal for controlling LED lights, switching low-current signals, and for motor driving circuits and constant-current applications. Its low thresholds, low on-state resistance, and low capacitance make it an effective component for amplifier driver stages and filtering circuits. As such, it is a reliable and economical choice for many low-power applications.
The specific data is subject to PDF, and the above content is for reference
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