NVATS5A302PLZT4G

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NVATS5A302PLZT4G is a power quality improvement MOSFET with a high maximum drain-source voltage. It is a high voltage, N-Channel Enhancement Mode MOSFET that can handle up to 175V and 6A current. This device is suitable for applications such as AC-DC converters, DC-DC converters, PFC circuits, and Active Clamp Circuits. It offers excellent performance in terms of low switching loss, low on-resistance, and low leakage.

This MOSFET operates in one of the two possible modes. The first mode is the enhancement mode and the second mode is the depletion mode. In the enhancement mode, the MOSFET is turned off as the gate-source voltage is less than the threshold voltage. In the depletion mode, the MOSFET is turned on as the gate-source voltage is more than the threshold voltage.

The NVATS5A302PLZT4G device has an internal VGS 24V voltage rating and 1.8V of threshold voltage. It can handle a maximum drain-source voltage of 175V and a maximum continuous drain current of 6A. It also has a P-channel structure and an adjustable over-voltage protection for increased safety. The on-resistance (RDS(ON)) is low too and the maximum power dissipation is 1.5W.

The NVATS5A302PLZT4G is ideal for applications such as AC-DC converters, DC-DC converters, PFC circuits, and Active Clamp Circuits. The MOSFET is well suited for high voltage power circuits because of its desirable low switching loss, low on-resistance, high maximum drain-source voltage, and low leakage. It is able to provide excellent power efficiency and meets the demanding requirements of power circuits.

In conclusion, the NVATS5A302PLZT4G is a high voltage, N-Channel Enhancement Mode MOSFET that is suitable for high voltage power circuits. It is suitable for applications such as AC-DC converters, DC-DC converters, PFC circuits, and Active Clamp Circuits and offers Excellent performance in terms of low switching loss, low on-resistance, and low leakage. The device also has VGS 24V rating, 1.8V threshold voltage, 175V max drain-source voltage, and 6A max drain current. The device is well suited for high voltage power circuits and provides excellent power efficiency and meets the demanding requirements of power circuits.

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