NVATS5A106PLZT4G Discrete Semiconductor Products |
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Allicdata Part #: | NVATS5A106PLZT4GOSTR-ND |
Manufacturer Part#: |
NVATS5A106PLZT4G |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CHANNEL 40V 33A ATPAK |
More Detail: | P-Channel 40V 33A (Ta) 48W (Tc) Surface Mount ATPA... |
DataSheet: | NVATS5A106PLZT4G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29445 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | ATPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1380pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVATS5A106PLZT4G is a high performance, low on resistance N-Channel MOSFET that is ideal for use in a variety of power supply, motor control and switching applications. It is capable of providing excellent performance for both linear and switching applications. Its low on resistance makes it an excellent choice for power management applications.
One of the primary features of the NVATS5A106PLZT4G is its extremely low on resistance versus temperature. This makes it ideal for a variety of applications, such as switching power supplies and motor control. In a switching power supply, MOSFETs are used to switch current on and off rapidly which allows for very efficient transfer of power. At higher temperatures, the on resistance of the MOSFET increases, leading to significant power losses. The NVATS5A106PLZT4G has a very low on resistance which helps minimize these losses and thus can offer more efficient transfer of power.
In motor control applications, the NVATS5A106PLZT4G is used to switch current rapidly on and off. This allows for precise control of the speed and direction of the motor. In higher temperature applications, the on resistance of the MOSFET increases, making it difficult to maintain precise control of the motor. The low on resistance of the NVATS5A106PLZT4G helps minimize these losses and hence makes the motor more controllable.
The NVATS5A106PLZT4G is also used in switching applications in many different projects. In these applications, high performance, low on resistance MOSFETs are necessary in order to provide the desired switching speed and accuracy. The low on resistance of the NVATS5A106PLZT4G helps to ensure that the switching speed and accuracy are maintained over a wide temperature range.
The working principle of the NVATS5A106PLZT4G is based on the principle of MOSFETs. A MOSFET is a four-terminal device that consists of a gate, drain, source and substrate. The gate is responsible for controlling the flow of current between the drain and the source by varying the amount of voltage applied to it. The NVATS5A106PLZT4G is an N-channel MOSFET, meaning that a positive voltage applied to the gate causes electrons to move from the source to the drain, thus allowing current to flow through the device. The low resistance of the MOSFET makes it an ideal choice for applications requiring high switching speeds and precise control.
The NVATS5A106PLZT4G is an excellent choice for a variety of power application uses, such as switching power supplies and motor control. Its low on resistance and high switching speed make it the ideal choice for these applications. In addition, the ability of the MOSFET to maintain its low on resistance over a wide temperature range makes it a great choice for use in high temperature applications. With its low on resistance and high performance, the NVATS5A106PLZT4G is a great choice for anyone looking to minimize losses and maximize efficiency.
The specific data is subject to PDF, and the above content is for reference
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