NVATS4A104PZT4G

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The NVATS4A104PZT4G is a single N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is one of the most widely used type of MOSFET in the power electronics industry. The NVATS4A104PZT4G has a variety of characteristics that make it a superior component for a variety of applications.

The NVATS4A104PZT4G is a discrete component with a voltage rating of 105V, a drain source voltage of 100V, and a maximum drain current of 40A. It is designed to provide superior performance in high-frequency and power switch applications from -55°C to 150°C. The MOSFET also has a high input capacitance, ensuring minimal signal degradation and superior RF performance.

The main application for the NVATS4A104PZT4G is in high-frequency and power switch applications. It is ideal for switching applications that require both high frequency and high switching speed. It also has high input impedance, low ON resistance, and low gate-source capacitance, making it suitable for use in high frequency switching applications. Additionally, because of its robust construction, it can be used in a variety of industries, including automotive, medical, and industrial applications.

The NVATS4A104PZT4G is a single N-channel MOSFET, which operates using the basic principle of Conduction and Capacity. In a Conduction Mode, the gate voltage controls the drain current based on the input voltage and the drain-source voltage. In the Capacity Mode, the gate current is limited by the drain-source capacitance, which effectively acts as a filter, allowing the voltage to be regulated, and allowing the switch to be operated at high frequencies.

The switching behavior of the NVATS4A104PZT4G is determined by the drain-source capacitance. When switched on, the charge stored in the gate-source capacitance rapidly increases, increasing the current and voltage at the drain. This rapid increase in voltage is known as the turn-on or switching speed of the MOSFET. When the gate voltage is reduced to a low voltage, the current begins to decrease, and the drain-source capacitance begins to rapidly decrease as well, reducing the voltage and current at the drain. This is referred to as the turn-off or switching speed of the MOSFET.

The NVATS4A104PZT4G is an excellent choice for a variety of high-frequency and power switch applications. It has a unique combination of characteristics, including a high input capacitance, low gate-source capacitance, low on-resistance, and a high switching frequency, making it suitable for use in high-fidelity, high-power applications. Additionally, its robust construction ensures that it can withstand the rigors of a variety of industries.

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