NVATS5A304PLZT4G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	250nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13000pF @ 20V
FET Feature:	--
Power Dissipation (Max):	108W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	ATPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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The NVATS5A304PLZT4G is a single field effect transistor (FET) belonging to the NVATS range of products manufactured by NuoNa. It has a very low reverse breakdown voltage and high current drive capability. This makes it ideal for use in applications such as power switching and high frequency amplifiers. In this article we will discuss the application field and working principle of this device.This device is fabricated using the nanotechnology developed by NuoNa which allows the device to have features such as very low reverse breakdown voltage (<5V) and high current drive capability up to 25A. This makes the device ideal for power switching, high frequency amplifiers and other applications.This device works on the principle of an insulated gate bipolar transistor (IGBT). In an IGBT, the gate voltage is applied to a pair of terminals in a transistor. When a forward gate voltage is applied, current will flow between the emitter and collector of the IGBT, providing the output with power. When the gate voltage is reversed, current will not flow and the output will be free from power.In the case of the NVATS5A304PLZT4G, the gate voltage needs to be higher than 4.0V for efficient operation. This is also known as the threshold voltage. At this voltage, the device will turn on and allow current flow from the drain to the source. Beyond this voltage, the current flowing through the device will increase.The device is also protected from excessive current due to its inbuilt current limiting feature. This feature limits the device’s current to a safe level. The device is also protected against over-voltage due to its in-built voltage clamping feature. This feature ensures that the device is not damaged by voltage overloads.The device also has a high speed switching capability. This feature allows it to switch off quickly, thus reducing power consumption. This makes the device ideal for switching applications such as high frequency amplifiers or power supplies.In conclusion, the NVATS5A304PLZT4G is a field effect transistor (FET) manufactured by NuoNa. It is designed for applications such as power switching and high frequency amplifiers. It works on the principle of an IGBT, where current is allowed to flow freely when a forward gate voltage is applied and current is not allowed to flow when the gate voltage is reversed. It has a very low reverse breakdown voltage and high current drive capability. It is also protected from excessive current and over-voltage due to its in-built current limiting and voltage clamping features. Lastly, it has a high speed switching capability, making it ideal for use in switching applications.

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