NVATS5A108PLZT4G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	77A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10.4 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	79.5nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3850pF @ 20V
FET Feature:	--
Power Dissipation (Max):	72W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	ATPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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NVATS5A108PLZT4G is a single N-Channel Enhancement Mode Power MOSFET developed by N-Vent Technology. This type of semiconductor device is typically used in applications that require high-power switching and signal amplification such as power supply circuits and audio amplifiers.The NVATS5A108PLZT4G uses a vertical structure with self-aligned gate technology and is packaged in a small, low-profile, "PowerPAK®" package. This type of package offers important advantages such as low thermal resistance and improved electrical and thermal performance. Additionally, the MOSFET is robust and extremely reliable, able to withstand high temperatures and long operating lifetimes.The NVATS5A108PLZT4G is an enhancement mode device, meaning that the device will switch on when the gate voltage is greater than the source voltage. When enough gate-to-source voltage is applied, a conducting channel is formed between the source and the drain, allowing the drain and source current to flow. The gate-to-source voltage (VGS) is the critical factor that determines the threshold, or point at which the device begins to conduct. The breakdown voltage (VDSS) of the device is the maximum drain-to-source voltage that the device is designed to withstand before it breaks down and stops conducting.When the device is operating in saturation mode, the VDS voltage is either equal to or greater than the threshold voltage VGS. In saturation mode, the device is providing its maximum "on" resistance. This value is known as the drain-to-source on-state resistance (RDSON). The NVATS5A108PLZT4G has a low RDSON of 4 mohm and an average gate charge (Qg) of 4.0 nC, making it ideal for high-speed switching applications.When switching off the device, the drain current must be reduced quickly enough such that the power dissipation remains below the maximum safe operating rating. Since the NVATS5A108PLZT4G has a low gate-to-source capacitance (Ciss) of only 39 pF, the gate can be charged and discharged relatively quickly, allowing for high-speed switching times.Finally, the NVATS5A108PLZT4G has a maximum junction temperature of 150 °C and a maximum drain-to-source breakdown voltage (VDS) of 60 V, allowing it to be used in high temperature and high voltage applications.In summary, the NVATS5A108PLZT4G is a single N-Channel Enhancement Mode Power MOSFET with a low RDSON, low Ciss, and high VDS rating, making it suitable for applications where high-power switching and signal amplification are required. It is also robust and reliable, able to withstand high temperatures and long operating lifetimes. Additionally, the PowerPAK® package offers improved thermal performance over other packages.

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