PD57002-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD57002-E is a type of field effect transistor (FET) and is specifically categorized as a radio-frequency (RF) FET. It is commonly used for both low and high gain audio and power video amplification applications. It is especially suitable for wide band amplifying applications because of its wide frequency range from 50 kHz to 3GHz.

FETs are distinct from other transistors due to their structure. These transistors are made up of an insulated gate electrode, which is used to control the current flow between the source and the drain of the transistor. There are three different types of FETs: junction FETs (JFETs), metal-oxide-semiconductor FETs (MOSFETs), and “HEMT,” which stands for high-electron-mobility transistors. Each type has different characteristics that make it applicable in different circumstances. The PD57002-E is a MOSFET.

The operation of MOSFETs is based on the principle of capacitive coupling. In this type of transistor, an electric field is formed between the gate and the source and drain, creating an electrical capacitance between these layers. When a voltage is applied to the gate, it attracts the electrons away from the source, allowing them to flow through the channel freely and creating a low resistance. This allows current to flow between the source and the drain. This process is known as “punch-through” and is the basis of the operation of a MOSFET.

The PD57002-E is widely used in the audio and power video amplification fields due to its low noise and high gain capabilities. It is also widely used in wideband amplifiers due to its wide frequency range from 50 kHz to 3GHz, making it suitable for both low and high gain applications. Additionally, it has very low on-state resistance, meaning that it can be used as a switch in order to control the flow of current in an application.

In conclusion, the PD57002-E is a Radio Frequency FET which is most commonly used for low and high gain audio and power video amplification applications. It has a wide frequency range of 50kHz to 3GHz and is characterized by low noise and high gain capabilities. Additionally, it has a very low on-state resistance, making it suitable to use as a switch to control the flow of current. As a result, FETs such as the PD57002-E are one of the most widely used transistors in modern electronics.

The specific data is subject to PDF, and the above content is for reference