PD57018-E Allicdata Electronics
Allicdata Part #:

497-5305-5-ND

Manufacturer Part#:

PD57018-E

Price: $ 22.46
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 65V 945MHZ PWRSO10
More Detail: RF Mosfet LDMOS 28V 100mA 945MHz 16.5dB 18W 10-Pow...
DataSheet: PD57018-E datasheetPD57018-E Datasheet/PDF
Quantity: 241
1 +: $ 22.46000
10 +: $ 21.78620
100 +: $ 21.33700
1000 +: $ 20.88780
10000 +: $ 20.21400
Stock 241Can Ship Immediately
$ 22.46
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 2.5A
Noise Figure: --
Current - Test: 100mA
Power - Output: 18W
Voltage - Rated: 65V
Package / Case: PowerSO-10 Exposed Bottom Pad
Supplier Device Package: 10-PowerSO
Base Part Number: PD57018
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD57018-E is a type of Field-Effect Transistor (FET) and is part of a family of transistors designed for radio frequency (RF) applications. It is well-suited for use in high-frequency circuits and is capable of operating over a wide range of frequencies. It can also operate in the GHz range and is thus suitable for a variety of applications.

The anatomy of a FET consists of a gate, drain, and source. This PD57018-E has an n-channel FET architecture, meaning it is composed of an n-type source and drain attached to a p-type gate. The gate is the control terminal of the FET, while the drain and source control the current flow and voltage. The main function of the PD57018-E is to act as a switch when a signal is applied to the gate terminal, allowing the current to flow between the source and drain.

The working principle of the PD57018-E is based on the idea that a voltage applied to the gate terminal can either enhance or deplete the number of charge carriers in the region between the source and drain. When the voltage applied to the gate is positive, it will enhance the number of charge carriers, increasing the current flow from the source to the drain and allowing the FET to be used as a switch. Conversely, when the voltage applied to the gate is negative, the charge carriers are depleted, decreasing the current flow and allowing the FET to be used as an attenuator.

The PD57018-E is well-suited for a variety of RF applications. It can be used in radio transmitters to switch between multiple antennae. It can also be used in radio receivers as an amplifier or attenuator. It is also used in frequency shifters and signal modulators, and can be used as an oscillator. In addition, the PD57018-E can be used in circuits such as filters and analog-to-digital converters.

In conclusion, the PD57018-E is an n-channel FET suitable for high frequency applications. It is capable of operating over a wide range of frequencies and is ideal for use in radio frequency (RF) circuits. It can be used for switching, amplifying, and attenuating signals, as well as for filtering and signal modulation.

The specific data is subject to PDF, and the above content is for reference

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