PD57006TR-E Allicdata Electronics
Allicdata Part #:

497-6475-2-ND

Manufacturer Part#:

PD57006TR-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANSISTOR RF POWERSO-10
More Detail: RF Mosfet LDMOS 28V 70mA 945MHz 15dB 6W PowerSO-10...
DataSheet: PD57006TR-E datasheetPD57006TR-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: 1A
Noise Figure: --
Current - Test: 70mA
Power - Output: 6W
Voltage - Rated: 65V
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package: PowerSO-10RF (Formed Lead)
Base Part Number: PD57006
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PD57006TR-E is a type of electrical component that is known as an RF MOSFET (Radio Frequency Metal-Oxide-Semiconductor Field Effect Transistor). This type of transistor is designed to operate at higher frequencies and is used in a variety of applications such as RF amplifiers, mixers, and oscillators. The PD57006TR-E is a high-voltage MOSFET with an enhanced coupling coefficient and a low on-resistance. This makes it particularly suited for high-speed switching, high-gain amplifiers, and low-noise circuits.

The working principle of a MOSFET is relatively simple, yet complex. A MOSFET consists of three layers; the gate, the source, and the drain. The gate is the layer through which the current flows. The source and drain are respectively located on either side of the gate. When a voltage source is applied to the gate, an electrostatic field is created between the gate and the source. This electrostatic field attracts carriers, or electrons, to the gate and repels them from the source and the drain. When the voltage increases, more carriers are attracted to the gate, thus allowing the flow of current through the MOSFET.

The PD57006TR-E offers several advantages over other types of MOSFETs, including higher operating voltages, higher current handling capabilities, increased gain and linearity, and better noise characteristics. Additionally, the PD57006TR-E has a higher resistance to reverse-bias leakage than other MOSFETs, allowing it to function optimally even in high-voltage applications.

The PD57006TR-E MOSFET has a wide range of applications. It is commonly used in audio amplifiers, high-frequency switching, low-noise amplifiers, voltage-controlled oscillators, modulators, radio frequency amplifiers, and television tuners. Additionally, this type of transistor is commonly used in power switching applications, such as controlling motor speed or inverter circuits.

In conclusion, the PD57006TR-E is a high-voltage MOSFET with a high current handling capability, low noise characteristics, and excellent reverse-bias leakage resistance. Its wide range of applications makes it ideal for a variety of electronic systems, such as audio amplifiers, RF amplifiers, and power switching applications. It’s impressive performance and ability to handle high voltages make it one of the most popular MOSFETs on the market today.

The specific data is subject to PDF, and the above content is for reference

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