PD57018TR-E Allicdata Electronics
Allicdata Part #:

497-6477-2-ND

Manufacturer Part#:

PD57018TR-E

Price: $ 16.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANSISTOR RF POWERSO-10
More Detail: RF Mosfet LDMOS 28V 100mA 945MHz 16.5dB 18W PowerS...
DataSheet: PD57018TR-E datasheetPD57018TR-E Datasheet/PDF
Quantity: 1000
1 +: $ 16.06000
10 +: $ 15.57820
100 +: $ 15.25700
1000 +: $ 14.93580
10000 +: $ 14.45400
Stock 1000Can Ship Immediately
$ 16.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 2.5A
Noise Figure: --
Current - Test: 100mA
Power - Output: 18W
Voltage - Rated: 65V
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package: PowerSO-10RF (Formed Lead)
Base Part Number: PD57018
Description

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The PD57018TR-E is an advanced field-effect transistor (FET) designed for operation in the radio-frequency (RF) range. It is an enhancement-mode FET that utilizes advanced semiconductor materials and processes to provide high performance and excellent reliability over a wide range of frequencies and temperatures. It is typically used for power applications in the high-power, high-frequency range, and is suitable for use with sensitive electronics such as communication equipment, base station amplifiers, and broadband amplifiers. The PD57018TR-E is available in a variety of packages including the TO-220, TO-268, and TO-292. In addition, it is available in a broad range of operating voltages, ranging from 25 V to 500 V.

The PD57018TR-E utilizes an enhancement-mode FET design. This type of device operates in two modes: enhancement and depletion. When an input voltage applied to the gate voltage exceeds a certain threshold (determined by the design of the device), the transistor enters the enhancement mode. In this mode, the drain and the source of the device become reverse-biased, allowing current to flow from the drain to the source. Additionally, the output impedance is extremely low and the gain is high, allowing for high switching speeds. When the input voltage is below the threshold voltage, the device enters the depletion mode and no current will flow through the transistor.

The PD57018TR-E is designed for use in high power, high frequency applications. It is rated for operation from 50 MHz to 12 GHz and can handle power up to 150 W at 25 V. It offers excellent gain and gain flatness over the entire frequency range, and its low noise figure makes it well-suited for sensitive applications. Additionally, it offers excellent immunity to signal interference due to its wide bandwidth, high linearity and high signal-to-noise ratio. As a result, it is an excellent choice for applications requiring wide bandwidth and reliable signal transmission.

Due to its wide range of features and its high performance, the PD57018TR-E is an ideal choice for a variety of RF applications. It can be used in applications such as base station amplifiers, broadband amplifiers and communication systems. Additionally, it can be used in applications that require high speed switching and reliable signal transmission, such as RFID systems, automatic meter-reading systems, or wireless data transfer systems. The PD57018TR-E is also well-suited for industrial and automotive applications, where the voltage and current requirements are higher than those of consumer electronics.

The PD57018TR-E is designed for use in a variety of RF applications, including power amplifiers, signal processing, and signal routing. Its robust construction permits operation over a wide temperature and voltage range, and its low noise figure makes it well-suited for sensitive applications. Additionally, its high linearity, wide bandwidth, and high signal-to-noise ratio make it an excellent choice for applications requiring reliable signal transmission. The PD57018TR-E is an ideal choice for any application that requires high-performance, high-power radio-frequency operation.

The specific data is subject to PDF, and the above content is for reference

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