PD57060-E

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PD57060-E Application Field and Working Principle

The PD57060-E is a silicon N-channel enhancement-mode field-effect transistor (FET). It is designed to operate in RF and microwave systems. The combination of low gate drive and low capacitance, makes the device well suited for high frequency applications such as RF amplifiers, oscillators, gain/phase control and switching. The PD57060-E has been tested and characterized to work in frequencies up to 40 GHz.

Working Principle

The PD57060-E field-effect transistor is an enhancement-mode device. This means that, unlike a depletion-mode device, an external voltage is required to “turn on” the device. The device consists of a semiconductor section within the gate oxide layer, which is connected to a source and drain region. By applying a positive voltage to the gate terminal, the conductivity between the source and drain is increased since electrons are attracted to the gate. As the gate voltage increases, the electrons form a channel through the Gate Oxide layer and the source and drain, thus allowing current to flow.

The PD57060-E FET has a low gate drive, which means the voltage required to turn on the device is much lower than other FETs. This allows it to operate in high frequency applications, as the gate drive is less susceptible to spurious signal overload. It also has a low capacitance of 25pF, making it well-suited for signal switching and amplification, allowing it to switch signals with minimal signal distortion and loss. The device has been tested and characterized to operate in frequencies up to 40GHz.

The PD57060-E is an ideal device for RF and microwave applications. It is robust, low power and provides low capacitance, making it well suited for high frequency signal switching, amplification and gain/phase control. The device has been tested and characterized to operate in frequencies up to 40 GHz.

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