PD57018

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	945MHz
Gain:	16.5dB
Voltage - Test:	28V
Current Rating:	2.5A
Noise Figure:	--
Current - Test:	100mA
Power - Output:	18W
Voltage - Rated:	65V
Package / Case:	PowerSO-10 Exposed Bottom Pad
Supplier Device Package:	10-PowerSO
Base Part Number:	PD57018

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Introduction

PD57018 is a silicon-based RF MOSFET (metal-oxide-semiconductor field effect transistor) designed and manufactured specifically for RF (Radio Frequency) applications. It is a versatile high-frequency transistor and offers enhanced dynamic performance, making it suitable for a wide range of applications. The device has significant advantages over traditional BiMOS and other similarly designed MOSFETs, including increased efficiency, improved thermal stability, longer lifetime, and better breakdown voltage ratings. In this article we will examine the PD57018\'s application field, construction and working principle.

Application Field

The PD57018 is ideally suited for radio frequency applications such as transmitters and receivers, broadband amplifiers, switching networks, and measurement systems. Its wide frequency range and superior performance make it suitable for both narrowband and wideband circuits. The PD57018 can be used in both continuous-wave (CW) and pulse-width modulation (PWM) applications, with an upper frequency limit of up to 4GHz. Thanks to its excellent distortion characteristics, the device is also ideally suited for digital speech processing applications, providing superior distortion-free performance.

Construction and Working Principle

The PD57018 is a planar N-channel enhancement-mode MOSFET, and is constructed using a silicon-on-insulator (SOI) process. The basic construction of the device is similar to any other MOSFET, with the major difference being that the PD57018 has an internal RF input signal switch. This switch ensures that the source follower is connected only when the voltage on the Gate exceeds the threshold voltage of the MOSFET. This allows the PD57018 to switch between a low-impedance and high-impedance circuit, depending on the input signal. The working principle of the PD57018 is based on the basic principle of a MOSFET. When the voltage on the Gate is increased, the electric field created between the Source and Drain attracts electrons towards the Drain, allowing electric current to flow. When the voltage on the Gate decreases, the electric field between the Source and Drain collapses, and the flow of electric current is blocked. The advantage of this device is that it can be used in either a low-impedance or high-impedance circuit, depending on the input signal.

Conclusion

In conclusion, the PD57018 is an excellent device for RF applications. It offers superior performance, enhanced dynamic characteristics, and improved thermal stability. Its wide frequency range and excellent distortion characteristics make it suitable for both digital speech processing and radio frequency applications. In addition, its construction, based on a silicon-on-insulator process, ensures that the device can operate in both low-impedance and high-impedance circuit configurations.

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