PD57060S-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD57060S-E is a high-performance RF field-effect transistor designed for use in mobile and stationary applications requiring extreme power requirements over a wide frequency range. The device exhibits excellent linearity and power handling capability. Its small size, low parasitics and high speed of switching make it ideal for use in RF amplifiers and switching circuits.

The PD57060S-E is an A-FET, an abbreviation of RF Field Effect Transistor. It is a reverse-feeding structure semiconductor device consisting of a source, gate, and drain. The source provides current and the gate controls it. It differs from a bi-polar transistor in that it is voltage-controlled rather than a current-controlled device.

The PD57060S-E operates in the frequency range of 800 MHz to 2.5 GHz, making it a suitable device for applications where high power but efficient operation is desired. For example, the device can be used in applications such as base station amplifiers, consumer electronics, microwave transmitters, and satellite up converters.

The key features of the PD57060S-E include low gate-source voltage, low noise figure, and high gain. It has a breakdown voltage of 10 volts and a peak current of 8.75 A. The device is also capable of providing over 6 Watts of RF power output at 1 GHz. In addition, the device features a low minimum noise figure of just 0.7 dB, making it ideal for low noise applications.

The working principle of the PD57060S-E is relatively straightforward. When a voltage is applied to the gate terminal, a depletion region forms between the source and drain terminals. This region acts as an ohmic resistance that is inversely proportional to the applied voltage. As the voltage increases, the size of the depletion region decreases, reducing the resistance between the source and drain and allowing current to flow.

In addition, the PD57060S-E has a low gate capacitance of just 8 pF, meaning that it can be used in a variety of RF circuits. This makes the device ideal for applications such as low-noise amplifiers and filters. Furthermore, the device has excellent power handling capabilities, making it suitable for higher power applications such as narrowband amplifiers and microwave ovens.

In conclusion, the PD57060S-E\'s high performance, low parasitics, and ESD protection make it an ideal choice for a wide range of high-frequency, power applications. It is an excellent choice for those looking for an efficient, high performance field-effect transistor for their mobile and stationary applications.

The specific data is subject to PDF, and the above content is for reference