PD57060TR-E Allicdata Electronics
Allicdata Part #:

PD57060TR-E-ND

Manufacturer Part#:

PD57060TR-E

Price: $ 29.53
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 65V 945MHZ PWRSO-10
More Detail: RF Mosfet LDMOS 28V 100mA 945MHz 14.3dB 60W 10-Pow...
DataSheet: PD57060TR-E datasheetPD57060TR-E Datasheet/PDF
Quantity: 1000
600 +: $ 26.84680
Stock 1000Can Ship Immediately
$ 29.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 14.3dB
Voltage - Test: 28V
Current Rating: 7A
Noise Figure: --
Current - Test: 100mA
Power - Output: 60W
Voltage - Rated: 65V
Package / Case: PowerSO-10 Exposed Bottom Pad
Supplier Device Package: 10-PowerSO
Base Part Number: PD57060
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD57060TR-E is a MOSFET (metal-oxide-semiconductor field-effect transistor) device designed to operate as a switch in radio frequency (RF) applications. It is a high-current device capable of switching several amps of DC current, making it well-suited for use in digital control circuitry. MOSFETs are widely used in RF applications as they provide superior linearity, switching speed, and lower loss compared to other transistor technologies.

The PD57060TR-E features an ultra-low threshold voltage (Vt), which allows it to be used to switch higher voltages. The Vt is the minimum level needed to turn the device on, and a lower Vt translates to less electrical power used to switch higher voltage levels. In addition, the device has extremely low gate-to-source capacitance, making it ideal for high frequency applications. The device is also well-suited for switching or controlling digital signals or providing low-loss digital control of analog signals.

The working principle of MOSFET devices like the PD57060TR-E is built upon basic circuit theory principles. At its core, the device is an n-channel transistor, meaning it is composed of three layers of semiconductive material. These are the source, the drain, and the gate. A voltage applied to the gate causes the gate to attract and ionize the charges of a particular valence stored in the gate itself. This results in a current flow through the channel between the source and drain. The current flow is proportional to the amount of charge stored within the gate.

In order to effectively use the PD57060TR-E, understanding the operation and application of the device is important. The device can be used in a variety of applications, such as switching, controlling, or providing low-loss control of analog signals. The device is great for switching DC current in digital control circuitry. The device is also well-suited for high frequency applications due to its ultra-low threshold voltage and ultra-low gate-to-source capacitance. Understanding these features and their implications to the device’s effectiveness can help in the design and implementation of systems that utilize the device.

In conclusion, the PD57060TR-E is a MOSFET device designed for use in radio frequency applications as a switch. It boasts an ultra-low threshold voltage and ultra-low gate-to-source capacitance, making it well-suited for high frequency applications. In addition, the device can be used in a variety of applications, such as switching, controlling, or providing low-loss digital control of analog signals. Understanding the features and working principles of the device is essential to using it effectively in any particular system.

The specific data is subject to PDF, and the above content is for reference

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