PD57018S-E Allicdata Electronics
Allicdata Part #:

497-5306-5-ND

Manufacturer Part#:

PD57018S-E

Price: $ 16.88
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 65V 945MHZ PWRSO10
More Detail: RF Mosfet LDMOS 28V 100mA 945MHz 16.5dB 18W PowerS...
DataSheet: PD57018S-E datasheetPD57018S-E Datasheet/PDF
Quantity: 1000
400 +: $ 15.33770
Stock 1000Can Ship Immediately
$ 16.88
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 2.5A
Noise Figure: --
Current - Test: 100mA
Power - Output: 18W
Voltage - Rated: 65V
Package / Case: PowerSO-10 Exposed Bottom Pad
Supplier Device Package: PowerSO-10RF (Straight Lead)
Base Part Number: PD57018
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PD57018S-E is an integrated radio frequency power amplifier (PA) module with an internal switching circuit, which combines SiMOS technology, small size, low power consumption and high power capability in a single unit. It consists of a single-stage RF power MOSFET amplifier, a pre-driver stage and a pulse width modulated (PWM) control circuit, all integrated in a single package.

The PD57018S-E is designed for use in mobile communication systems, such as cellular, PCS, aircraft and emergency systems. It is capable of producing up to 30W of power from a 50Ω load. The module is available in 8 different package types and pin configurations, making it suitable for a wide variety of applications.

The PD57018S-E uses a unique single-stage amplifier which is highly efficient, providing up to 90% efficiency when driven at rated input levels. This efficiency helps to reduce power consumption and system heat, while at the same time providing high power output.

The power MOSFET amplifier stage of the PD57018S-E uses a high-efficiency design to achieve high gain and low distortion at extremely low-power levels. The amplifier has an adjustable attenuator, which can be used to optimize the amplifier’s performance over a wide range of input levels.

The pre-driver stage of the PD57018S-E is designed to ensure that the correct signal is sent to the power amplifier stage. It features adjustable gain and output saturation control, which allows for optimal performance at varying input levels.

The PD57018S-E features a PWM control circuit which ensures that the amplifier is operated within its safe operating range. The control circuit allows for the integration of tight frequency response and temperature stability. It can also be used to monitor the amplifier output power, input signal levels, over-current and over-temperature conditions.

The PD57018S-E is an ideal choice for applications which require high power, efficiency and reliability. It is ablle to meet the requirements of a variety of mobile communication standards, such as GSM/EDGE, HSPDA, LTE, CDMA and WCDMA, as well as Bluetooth and Wi-Fi.

The PD57018S-E is an excellent choice for those seeking an efficient, high-power RF amplifier solution. It is a reliable and cost-effective solution for a variety of communication needs.

The specific data is subject to PDF, and the above content is for reference

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