PD57018STR-E Allicdata Electronics
Allicdata Part #:

497-6476-2-ND

Manufacturer Part#:

PD57018STR-E

Price: $ 16.06
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANSISTOR RF POWERSO-10
More Detail: RF Mosfet LDMOS 28V 100mA 945MHz 16.5dB 18W PowerS...
DataSheet: PD57018STR-E datasheetPD57018STR-E Datasheet/PDF
Quantity: 1000
600 +: $ 14.59720
Stock 1000Can Ship Immediately
$ 16.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 945MHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 2.5A
Noise Figure: --
Current - Test: 100mA
Power - Output: 18W
Voltage - Rated: 65V
Package / Case: PowerSO-10 Exposed Bottom Pad
Supplier Device Package: PowerSO-10RF (Straight Lead)
Base Part Number: PD57018
Description

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The PD57018STR-E is a silicon N-channel depletion-mode, junction field-effect transistor (JFET) commonly used as an RF switch in a wide range of applications. It is designed to work with a variety of frequencies ranging from several kHz up to 1GHz and requires only a small amount of power to operate, making it an ideal choice for many radio frequency (RF) control applications. Its low capacitance allows for low noise operation and high frequency operation. The PD57018STR-E is characterized by high input and output impedance and a wide gain range. Additionally, it features low drain-source on-resistance and a low gate-source leakage current, making it a highly efficient transistor.

The PD57018STR-E is a single-gate JFET, meaning that it only requires a single gate in order to control its drain-source current. The gate-source voltage of the JFET acts as an input and controls the leakage current between the drain and source terminals. This leakage current is then used to modulate the output signal of the transistor. This is what gives the PD57018STR-E its versatility and makes it suitable for use in a wide range of RF applications.

The PD57018STR-E has a typical drain-source breakdown voltage of -6V and can handle up to -15V. It also has a max drain-source current of 0.33A and a max drain-source voltage of 24V. It is also relatively tolerant to power supply variations. Additionally, the drain-source capacitance of the PD57018STR-E is extremely low, with a typical value of 0.2pF, meaning it is well-suited for high frequency applications that require low noise levels.

The PD57018STR-E is used in various radio frequency applications, most commonly as an RF switch. Due to its low cost, ruggedness and high efficiency, it is often used for switching sensitive RF signals. It can be used for signal gating and routing, multiplexing, signal switching, level shifting, and more. The PD57018STR-E is used in a variety of systems, including satellite receivers, radio frequency (RF) control systems, remote control systems, and other automatic control systems.

The PD57018STR-E is a great choice for many radio frequency applications due to its versatility, low cost, and high efficiency. Thanks to its low capacitance, it is well suited for high frequency operation and can easily handle a wide range of signals. Its ruggedness and low power consumption also make it an ideal choice for many RF control applications.

The specific data is subject to PDF, and the above content is for reference

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