| Allicdata Part #: | PD57060STR-E-ND |
| Manufacturer Part#: |
PD57060STR-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | FET RF 65V 945MHZ PWRSO-10 |
| More Detail: | RF Mosfet LDMOS 28V 100mA 945MHz 14.3dB 60W PowerS... |
| DataSheet: |  PD57060STR-E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 945MHz |
| Gain: | 14.3dB |
| Voltage - Test: | 28V |
| Current Rating: | 7A |
| Noise Figure: | -- |
| Current - Test: | 100mA |
| Power - Output: | 60W |
| Voltage - Rated: | 65V |
| Package / Case: | PowerSO-10 Exposed Bottom Pad |
| Supplier Device Package: | PowerSO-10RF (Straight Lead) |
| Base Part Number: | PD57060 |
Description
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The PD57060STR-E is a metal-oxide semiconductor field-effect transistor (MOSFET) specifically designed for radio frequency (RF) applications. It is typically used in communications and other sensitive radio frequency applications such as those requiring non-resonant variable capacitance and low noise. The PD57060STR-E is a depletion-mode device and is composed of a source, gate, and drain. It operates in much the same way as a conventional transistor, but with a few key differences. Unlike a conventional transistor, the PD57060STR-E does not require a constant current flow through the source and gate to remain in an "on" state; instead, it is able to modulate between an "on" and "off" state depending on the voltage applied to the gate. Additionally, the device operates in an "off" state when the drain is open (i.e., when no current is flowing between the source and the drain), making it ideal for radio frequency applications. Because of its depletion-mode operation, the PD57060STR-E can be used in applications that require regulation of current flow without interruption of the flow when transitioning between "on" and "off" states. This makes it a good choice for modulation and linearizing applications, as well as for radio frequency amplifier stages and mixers. The device is also well-suited for switchable attenuator circuits, as its small gate-to-drain capacitance allows for fast switching times and low RF loss. Additionally, the PD57060STR-E has a low gate-to-drain capacitance of 10 pF, which is substantially lower than that of conventional bipolar transistors and MOSFETs. This low capacitance helps to minimize the noise generated by the device, making it ideal for use in applications requiring very low noise or extremely sensitive signals. The device’s low capacitance also allows for very fast switching times, making it well-suited for applications requiring high speed switching.Finally, the PD57060STR-E is able to operate over a wide range of temperatures, making it an excellent choice for applications where thermal resistance is an issue. It can operate over a range of -55°C to +125°C, allowing it to be used in a variety of environments.In summary, the PD57060STR-E is a depletion-mode MOSFET specifically designed for RF applications. Its depletion-mode operation, low gate-to-drain capacitance, and wide operating temperature range make it an excellent choice for applications requiring modulation, linearizing, amplifier and mixer stages, switches, and switchable attenuator circuits. It is also well-suited for applications requiring very low noise or extremely sensitive signals due to its low gate-to-drain capacitance and fast switching times.
The specific data is subject to PDF, and the above content is for reference
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