PD85006-E

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The PD85006-E is a high-performance RF MOSFET. It is designed to offer high power output, wide frequency range and excellent linearity in demanding RF and microwave applications. Its exceptional RF performance, combined with an extremely low gate and drain capacitance, make it ideal for use in high-efficiency power amplifiers such as those used in wireless communication systems.

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of field-effect transistor that has an insulated gate and is made from a semiconductor material such as silicon. It is similar to a junction transistor except that the gate is insulated from the channel. This allows for a higher degree of control of the flow of electrons in the channel.

The PD85006-E uses a native trench MOSFET process, which ensures a low source resistance, low power consumption and excellent frequency response. It has a drain-source breakdown voltage of 60V, a drain cutoff current of 1.2 mA, and a low total gate charge of 12nC. The device has an operating temperature range of -55°C to +150°C.

When used in RF applications, the PD85006-E requires an appropriate gate drive and bias circuit to ensure correct operation. In most cases, a negative gate-source voltage of -2.5 to -3V is needed in order to turn the device on and produce the desired power gain. The source resistance also needs to be reduced as much as possible in order to maximize efficiency and linearity.

The PD85006-E is capable of delivering high power outputs over a wide frequency range. It is ideal for use in RF power amplifiers, power oscillators and voltage-controlled oscillators. The device can be used in applications ranging from mobile communication systems to high-end VSAT systems.

The PD85006-E is a highly efficient device that offers excellent linearity and high power output in demanding RF applications. It is suitable for use in a range of wireless communication systems, including mobile and satellite communication systems. The device also features an extremely low gate and drain capacitance, making it ideal for applications that require high efficiencies and low noise.

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