PD85006L-E Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD85006L-E is a high performance lateral, GaAs FET (field effect transistor) that is widely used in different applications requiring high power gain and efficiency. It is an ideal choice for those applications where the desired performance has to be achieved in a small form factor. This advanced FET exhibits excellent RF characteristics with minimum thermal losses in comparison to other bipolar or FET transistors. Additionally, the PD85006L-E offers superior thermal management, stability, and excellent PRF capability. This makes it ideal for use in consumer electronics, as well as in a variety of mobile and aerospace applications.The PD85006L-E is a type of N-Channel MOSFET that exhibits better performance than similar transistors in same class. Its basic structure consists of two N-type source and drain terminals. It utilizes a specially designed silicon substrate material that is used to create the required P-channel region and the N-channel region. An array of N-channel MOSFETs is set up on the wafer specifically for the PD85006L-E,in a way that each transistor is electrically insulated from the others. The working principle of the PD85006L-E is not too complicated. When the gate of the MOSFET is left open, no current flows between the source and drain terminals. This results in a low “off” state. When a positive voltage is applied to the gate terminal, a thin conducting layer is created that serves as a channel from the drain to the source. As a result, current starts to flow between the source and drain,with the amount of current being proportional to the applied voltage. This brings us to the “on” state of the MOSFET. The PD85006L-E has become a popular choice for RF applications due to its high power gain and high efficiency. It is capable of offering up to 16db of power gain and at least 1. 2 watts output power in a very small package. This makes it ideal for use in applications such as mobile radios and satellite communications, where performance is of the utmost importance but size is limited.The PD85006L-E also offers excellent stability and thermal management capabilities. This makes it perfect for applications such as driving high power LEDs and other high-power devices that require long life and reliable operation. Additionally, the FET utilizes a very low resistance gate to ensure optimal performance. This low gate resistance allows the device to handle higher gate-source voltages than traditional FETs and make better use of the RF energy being transmitted. This offers the highest possible efficiency when being used in RF applications.In conclusion, the PD85006L-E is an ideal choice for applications that require a high power gain and low thermal losses. It also offers excellent RF performance and thermal management capabilities, making it perfect for various RF applications. These traits make it an ideal choice for use in mobile radios, satellite communications, and other high-power device applications.

The specific data is subject to PDF, and the above content is for reference