PD85025TR-E Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	870MHz
Gain:	17.3dB
Voltage - Test:	13.6V
Current Rating:	7A
Noise Figure:	--
Current - Test:	300mA
Power - Output:	10W
Voltage - Rated:	40V
Package / Case:	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:	PowerSO-10RF (Formed Lead)
Base Part Number:	PD85025

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PD85025TR-E Application Field and Working PrinciplePD85025TR-E is a high power depletion mode radio frequency (RF) MOSFET from NXP Semiconductors. It is a 4-pin device that belongs to the RF MOSFET family of devices, and is designed for applications such as switching and amplifying across a wide range of frequencies. This device is appropriate for use in wireless communication systems, and has been specified to operate from 50MHz to 1GHz. MOSFETs are semiconductor devices that are used for switching and amplifying. Like other types of transistors, they are used to control the flow of current in a circuit. In contrast to other types of transistors, MOSFETs are typically operated in the depletion mode, wherein there is no voltage drop across the gate. With no gate voltage, no current is flowing through the device, thus ensuring negligible power dissipation. This makes PD85025TR-E an excellent choice for applications requiring low power consumption. This particular MOSFET utilizes N-channel MOSFET technology, which functions by trapping or repelling majority carriers (electrons or holes) inside the junction between the source and drain regions. This results in a potential barrier which blocks the flow of current through the device until a specific bias is applied to the gate. When the bias is applied, electrons are attracted, thus allowing the majority carriers to pass through and allowing a flow of current. In addition to its relatively low power dissipation, PD85025TR-E is also capable of handling high power levels. The device has been specified to have a maximum drain current of 250 mA, allowing it to function in applications requiring high power. It is also specified to have a maximum drain-source voltage of 50 V, thereby making it suitable for use in a wide range of applications. In terms of size, the device is specified at 2.45mm x 3.16mm in dimensions, making it suitable for use in miniaturized applications. Furthermore, the device is highly robust and is specified to withstand a temperature range of -55°C to +150°C, ensuring reliable operation in a wide range of environments. Overall, the PD85025TR-E is an excellent choice for applications requiring a high power depletion mode RF MOSFET. It is capable of functioning at high power levels, whilst consuming relatively low levels of power. Furthermore, its robust construction and small form factor makes it suitable for use in a wide range of applications.

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