PD85025S-E

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The PD85025S-E is a N-channel Enhancement-mode Field Effect Transistor (FET) that is specifically designed for operation in the land mobile radio frequency (RF) range. This semiconductor device is used to control power flow between the power source and the load in an RF application. The PD85025S-E is optimized for high frequency operation and it also provides superior frequency stability and power handling capacity.

A FET consists of three terminals; source, drain, and gate. These terminals are analogous to the electrodes of a vacuum tube. The source and drain are the terminals of the device that are connected to the power supply or drain. The gate is the terminal that controls the current flow between the source and the drain. The resistance between the source and the drain is controlled by a voltage applied to the gate. When the voltage applied to the gate is low, the junction between the source and the drain is "closed", and when the voltage is increased, it opens the junction, allowing current to flow between the source and the drain.

The PD85025S-E is designed specifically for operation in the land mobile radio frequency range, offering superior efficiency while minimizing power consumption. Some of its features include reverse breakdown voltage, on-resistance, high crest factor, high current handling capacity and low thermal resistance. The part is fabricated using advanced high-efficiency epi-technologies, thereby providing superior performance in harsh RF environments. The PD85025S-E is also capable of handling up to 1.5A of steady state load currents and 14A of peak pulse current.

The PD85025S-E is primarily used in voltage-controlled oscillator (VCO) designs and high frequency RF modules. It can also be employed in power amplifier stages, where the FET serves as a variable resistance to control the current flow between the source and the drain. It is also used in RF power management applications, where it can be used to switch power between two or more systems. In addition, the PD85025S-E can also be used in phase shifters, frequency multipliers, IF and RF mixers, digital bias loads, low-noise amplifiers, avalanche-noise detectors, and voltage-controlled attenuators.

The PD85025S-E offers superior performance in RF applications, thanks to its low-on resistance, high frequency stability and high current handling capability. It is known for its high power handling capacity, low input capacitance, wide operating temperature range, and reliable, consistent performance. The part is also lightweight and small in size, making it ideal for use in various applications. Additionally, it is characterized by its low-noise and low-distortion characteristics, making it suitable for use in high-frequency RF circuits.

Because of its superior performance and versatility, the PD85025S-E is well-suited for a variety of applications. From voltage controlled oscillators to switching power between systems, the PD85025S-E is an ideal choice for a number of different applications. Its high frequency stability, power handling capacity, and robust design make the PD85025S-E the perfect choice for use in RF applications.

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