PD85025STR-E Discrete Semiconductor Products

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The PD85025STR-E is a gallium nitride (GaN) on silicon carbide (SiC) high electron mobility transistor (HEMT) which is employed in a wide range of applications. It has been used in high-frequency and high-power amplifiers, RF switches, local oscillators, and oscillators over the frequency range of 30 MHz up to millimeter-wave frequencies of 50 GHz. The PD85025STR-E device consists of a 50 ohm GaN HEMT on a standard production SOI wafer. The device has a broad range of operating voltages from 8 to 28V.

The GaN HEMT technology employed in the PD85025STR-E has many advantages over traditional technologies such as LDMOS and BJTs. These advantages include low capacitance, high current carrying capability, high drain-to-source breakdown voltage, high gain and low noise figure. It also has extremely low gate and drain feed-through, which allows for high gain and high frequency operation.

The PD85025STR-E is a normally-off device. When there is no voltage applied to the gate, the device will be off and no current will flow. The device is designed such that, when a gate voltage is applied, it will turn on and allow current to flow. The amount of current that can flow is determined by the drain voltage. The PD85025STR-E can handle drain voltage up to 28V, with a current rating of 10A. The device also has a very low on-resistance of 0.5 ohms, which allows for low voltage drop across the device.

The working principle of the PD85025STR-E is based on the basic theory of how a field effect transistor (FET) works. A FET is a voltage-controlled device consisting of a source, drain, and gate terminals. By applying a voltage to the gate terminal, the amount of current flowing from source to drain can be controlled. The PD85025STR-E works on the same principle but uses a GaN HEMT instead of a traditional MOSFET. The GaN HEMT has the advantage of being able to provide higher voltage and current ratings than a traditional MOSFET, as well as lower noise levels and leakage currents.

The PD85025STR-E is an ideal device for use in applications requiring high power, high voltage, high speed, and low noise levels. It is also suitable for use in switching applications, as it is able to switch high currents very quickly. The device is also capable of handling extremely high frequencies and is suitable for use in wireless communications, radar, and automotive systems. It is also ideal for use in medical devices and industrial power systems.

In conclusion, the PD85025STR-E is a high-performance GaN HEMT device which is used in a wide range of applications. It has the advantage of being able to provide higher voltage and current ratings than traditional MOSFETs, as well as low noise levels and leakage currents. It is ideal for use in high-power, high-voltage, high-frequency, and low-noise applications such as switching and wireless communications.

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