Name: PD85015TR-E Discrete Semiconductor Products
Brand: STMicroelectronics
SKU: 497-10345-2-ND
Price: 10.12 USD
Availability: InStock

PD85015TR-E Discrete Semiconductor Products
Allicdata Part #:	497-10345-2-ND
Manufacturer Part#:	PD85015TR-E
Price:	$ 10.12
Product Category:	Discrete Semiconductor Products
Manufacturer:	STMicroelectronics
Short Description:	TRANS RF N-CH FET POWERSO-10RF
More Detail:	RF Mosfet LDMOS 13.6V 150mA 870MHz 16dB 15W PowerS...
DataSheet:	PD85015TR-E Datasheet/PDF
Quantity:	1000

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$ 9.19828

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Specifications

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	870MHz
Gain:	16dB
Voltage - Test:	13.6V
Current Rating:	5A
Noise Figure:	--
Current - Test:	150mA
Power - Output:	15W
Voltage - Rated:	40V
Package / Case:	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:	PowerSO-10RF (Formed Lead)
Base Part Number:	PD85015

Description

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The PD85015TR-E is a type of semiconductor, specifically a Field Effect Transistor (FET). FETs are one of the main types of transistors, as defined by their operating principle, which is reliant on electric fields for controlling the current that flows through them. FETs have a variety of applications, including applications related to radio frequency (RF) and other signaling systems. The PD85015TR-E is specifically designed for use in RF and high frequency applications.

The PD85015TR-E FET is a commonly used switching device, as well as an amplifier for sound and radio signals. It functions by using an electric field as an input source, instead of an electrical current as used for regular transistors. This field can be caused by a DC voltage, AC input, or even a current applied across its gate and source, that is then modulated by another electrical signal. This allows the PD85015TR-E to act as an extremely efficient amplifier by making adjustments to the current flow with very minimal input current.

The PD85015TR-E FET has many practical applications including automotive electronics, personal electronics, and even audio applications, such as amplifiers and sound systems. Since FETs are particularly efficient at amplifying, they are often used in circuits that require high-frequency responses. This, plus the FET’s low power consumption and smaller size compared to other types of amplifying transistors, makes them a great option for designing more efficient circuits.

In terms of RF applications, the PD85015TR-E is often used in wireless communication systems. FETs are efficient at amplifying RF signal, making them ideal for radio link systems and data transmission. FETs are able to operate at lower voltages, meaning that they can be used to make more energy- efficient designs, which means less energy being wasted as heat. FETs also have a much faster response time, so they can handle bursts of data or signal changes much faster than other types of transistors.

Adding to the PD85015TR-E’s long list of advantages is its thermal stability. FETs have the ability to remain stable within a wider range of temperatures than other transistors. This thermal stability ensures that the output readings are consistent and reliable. In addition, FETs are also much more resistant to electrical noise interference than other types of semiconductors. This added noise immunity makes them a great option for circuits that are sensitive to interference or pollution.

The PD85015TR-E FET can be used in any circuit design where frequency, efficiency, or noise interference performance is critical. Its ability to handle high radio frequencies makes it the perfect choice for radio link systems, mobile communication systems, and high frequency applications. The FET’s low power consumption and smaller size make it a great choice for applications that require more efficient designs. Lastly, its thermal stability and noise immunity make it an ideal choice for applications that require a high degree of reliability.

The specific data is subject to PDF, and the above content is for reference

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