PD85006TR-E Discrete Semiconductor Products

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The PD85006TR-E is a high-frequency, high-performance lateral double diffused metal-oxide semiconductor field-effect transistor (LDMOS-FET). It is designed for applications requiring high reliability, high-power handling and improved operation up to 10GHz.

The PD85006TR-E is built using high-quality, high-purity silicon on an insulated substrate with double-diffusion isolation techniques. The isolation techniques form an isolation layer between the source and the drain which helps to minimize losses and increase stability. The transistor is then highly doped with boron and arsenic, which increases the carrier mobility and reduces the drain-to-source voltage (VDS).

The PD85006TR-E is very well suited for linear amplification applications due to its wide range of RF frequencies and low noise figures. The transistor has a high-voltage operating range (4-80V) and can handle up to 8A of current with a maximum power dissipation of up to 50W. The device is also designed to provide low noise figure and low distortion figures, making it an ideal device for linear amplification and high-frequency applications.

The working principle of the PD85006TR-E is quite simple. When a DC bias voltage is applied to the drain-to-source terminals, a conductive channel is formed between the source and the drain. This allows electrons to flow between the source and drain when the gate voltage is increased. The gate voltage controls the width of the conducting channel, which determines the level of current flowing through the transistor. The level of current is then amplified by the voltage applied between the source and drain.

The PD85006TR-E has been designed to provide a wide range of applications in the RF, microwave and aerospace industries. It is suitable for use in high power amplifier design, power switching, digital signal processing and automotive applications. The device has a robust design and can provide reliable operation in even the toughest of environments. Additionally, the device has a wide temperature range of -55°C to +125°C making it an ideal choice for high-temperature applications.

The PD85006TR-E is a high-performance, high-frequency, laterally diffused MOSFET designed to provide improved reliability, high power handling, and excellent performance up to 10GHz. The device is well-suited for linear amplifier applications due to its low noise figure and low distortion figures. Additionally, the device is designed to provide a robust design and wide temperature range, making it an ideal choice for a range of applications.

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