PD85015S-E

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The PD85015S-E is an RF Power Field Effect Transistor (FET) from the Microsemi Corporation. It is a normally-off depletion-mode enhancement mode device that is used for various RF and microwave applications. The PD85015S-E is a highly stable, relatively efficient, and economical product, and is a suitable replacement for many vacuum electron devices.

The working principle of the PD85015S-E is based on the electrostatic operation of the device. The base or gate voltage applied to the gate of the device controls the current between the drain and source, which is known as the drain current. When a positive gate voltage is applied, the channel between the source and drain is increased, allowing a greater current flow. As the gate voltage is increased, the drain current increases. When a negative gate voltage is applied, the channel between the source and drain is decreased, allowing a lesser current flow. Thus, by controlling the gate voltage, the drain current can be effectively controlled.

The PD85015S-E is primarily used in radio-frequency (RF) and microwave applications, such as in mobile radio, public address (PA) systems, transmitters and receivers, antenna systems, and components for the millimeter and sub-millimeter wave bands. It can also be used in power supplies, amplifiers, and analog-to-digital (A/D) converters. It has a high gain and can operate in a wide range of frequencies, making it a suitable replacement for vacuum electron devices. It is also suitable for high-frequency switching applications.

The PD85015S-E is a low-noise device that is characterized by its high stability and low power dissipation. It is an economical device, as it does not require bulky external components for operation. Its high efficiency enables it to be used in many circuits and applications, such as low-noise amplifiers, radio transmitters and receivers, cellular phones, satellite communications, and wireless networks. It is also used in consumer electronics, including digital TV, digital audio, gaming systems, and mobile phones. Additionally, it is used in antennas and antennas systems, consumer electronics, and telecommunications components.

The PD85015S-E is a reliable and highly stable device, due to its high gain and low output impedance. Its power consumption is relatively low and it has a high temperature coefficient and good temperature stability. The device is also designed to withstand sound and pressure levels of up to 150 dBc and 150 V/m respectively. It is a reliable product and is used widely in RF and microwave applications due to its stable performance and economical power consumption.

The PD85015S-E is a versatile FET and is well suited for many applications and circuits. It is widely used in radio and television broadcast applications, satellite communications, and wireless networks. It is also used in consumer electronics and offers high performance in used in various circuits, such as amplifiers, low-noise amplifiers, A/D converters, and power supplies. The PD85015S-E is a reliable, cost-effective product that is used in many RF and microwave applications.

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