PD85035STR1-E

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PD85035STR1-E is a high performance, low cost RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) specifically designed for use in Frequency Modulation (FM) broadcasting applications. This transistors features a low source to drain on-resistance, which provides superior gain, low noise and excellent directional characteristics. Additionally, the PD85035STR1-E has a number of other features, including high voltage operation, low input capacitance and high frequency linearity.

The application field of PD85035STR1-E transistors is mainly focused on broadcast applications such as FM broadcast transmitters, broadcast reception amplifiers, and FM receivers. This type of transistor is also suitable for use in other RF applications, such as Cellular repeaters, radio communication systems, satellite communication systems and secure networks.

PD85035STR1-E transistors work on the principle of Frequency modulation- where the frequency of a signal is modulated by another signal. When a modulating signal is applied to a PD85035STR1-E transistor, the voltage amplitude of the signal is changed. This results in the change in the frequency of the signal. The changes in the frequency are determined by the input voltage. As the voltage amplitude increases, the frequency of the signal increases. This process is used to achieve a desired output signal frequency.

The PD85035STR1-E transistors are designed to offer an enhanced performance, as compared to conventional transistors. Unlike traditional RF transistors, these devices have a low source to drain on-resistance, which enables them to provide superior gain, low noise and excellent directional characteristics. Additionally, these transistors are also designed with a high voltage operation and low input capacitance, which ensures a higher frequency linearity.

The PD85035STR1-E transistors are widely used in various broadcast applications, as well as in other RF communication systems. These transistors are preferred by manufacturers for their reliability, high performance and cost-effectiveness. These devices are also energy-efficient, which makes them an ideal choice for long-term RF systems.

The specific data is subject to PDF, and the above content is for reference