PD85050S Allicdata Electronics
Allicdata Part #:

PD85050S-ND

Manufacturer Part#:

PD85050S

Price: $ 15.18
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: RF MOSFET LDMOS 13.6V POWERSO-10
More Detail: RF Mosfet LDMOS 13.6V 500mA 870MHz 12dB 55W PowerS...
DataSheet: PD85050S datasheetPD85050S Datasheet/PDF
Quantity: 1000
400 +: $ 13.79380
Stock 1000Can Ship Immediately
$ 15.18
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 870MHz
Gain: 12dB
Voltage - Test: 13.6V
Current Rating: 1µA
Noise Figure: --
Current - Test: 500mA
Power - Output: 55W
Voltage - Rated: 50V
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Supplier Device Package: PowerSO-10RF (Straight Lead)
Description

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PD85050S is a full silicon RF Low Noise Amplifier (LNA) Device, designed using advanced 0.13um E-Mode Silicon bipolar (BiCMOS) process technology. It is designed to cover wide range of applications in different S-Band frequency coverage with high gain and low noise figure performance. PD85050S has less than 0.1dB of noise figure and provides more than 35dB of gain at different frequencies. This device also has excellent IP3 performance, which makes it suitable for various RF applications that require both high linearity and high gain.The PD85050S is a type of High End Field Effect Transistor (FETs). It is one of the fewest FETs, which is specifically designed for RF applications. It is constructed using an N-channel and P channel Lateral MOSFETs, which are integrated into a monolithic silicon structure. This device has a wide dynamic range, which allows it to perform with both high gain and low noise figure without any additional components.The working principle of PD85050S is based on the Lateral MOSFETs that are integrated in the transistor construction. The device is controlled through a current source which introduces a smaller current into the base region of the MOSFETs. This current source is connected in the control loop, through which the IDS and VGS can be adjusted to optimize the gain and gain flatness of the device.The high gain and low noise figure of the PD85050S make it suitable for various RF applications. It can be used for a number of applications such as wireless communication systems, cellular base stations, radio link receivers, FM radios, and so on. Moreover, it can also be used in military and satellite communication systems, which require high gain and low noise figure.The PD85050S is a high performance FET which provides excellent linearity and good IP3 performance. It is designed to meet customer’s needs in various challenging RF applications. Moreover, its wide dynamic range allows it to perform with both high gain and low noise figure without any additional components. This makes it a suitable choice for different types of RF applications.

The specific data is subject to PDF, and the above content is for reference

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