PD85035-E Allicdata Electronics
Allicdata Part #:

497-8299-5-ND

Manufacturer Part#:

PD85035-E

Price: $ 22.93
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: FET RF 40V 870MHZ
More Detail: RF Mosfet LDMOS 13.6V 350mA 870MHz 17dB 15W PowerS...
DataSheet: PD85035-E datasheetPD85035-E Datasheet/PDF
Quantity: 713
1 +: $ 20.84040
10 +: $ 19.22070
100 +: $ 16.41320
Stock 713Can Ship Immediately
$ 22.93
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 870MHz
Gain: 17dB
Voltage - Test: 13.6V
Current Rating: 8A
Noise Figure: --
Current - Test: 350mA
Power - Output: 15W
Voltage - Rated: 40V
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package: PowerSO-10RF (Formed Lead)
Base Part Number: PD85035
Description

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PD85035-E is an external high-performance field-effect (FET) device that was specifically designed to be used in a wide range of radio frequency (RF) applications. FET devices are versatile, wide-band switches and amplifiers that can be used in a variety of applications including radio-frequency (RF) signal processing, video signal processing and other digital signal processing.

The PD85035-E device offers several advantages over other types of semiconductor devices, such as bipolar transistors. FETs are faster, more power efficient and offer higher gain than traditional transistors. Additionally, they are more reliable, as they are less likely to be damaged by sudden voltage changes that can cause catastrophic failure in transistors.

The PD85035-E uses a combination of different technologies, including lateral double-diffused MOSFETs (LDMOS), gallium arsenide (GaAs) and structures, to provide an optimal level of performance. It features a high output voltage capability and a low operating voltage, making it well suited for use in high-power, high-gain applications such as power amplifiers and power switching.

The PD85035-E is also highly efficient at converting input power into output power and has a very low noise figure. This makes it ideal for use in multiple-input, multiple-output (MIMO) systems, where multiple signals need to be processed simultaneously. Additionally, the device is capable of handling a wide range of signal frequencies, making it suitable for use in digital radio applications.

The PD85035-E device is designed to operate over a wide range of temperatures and is extremely rugged. It is designed to withstand the harsh conditions of outdoor use, such as extreme temperatures and humidity levels. The device is also resistant to electrical interference, which allows it to brave the toughest conditions in the most challenging environments.

The working principle behind the PD85035-E device is quite simple. This FET family of devices allows current to pass through it with only a small voltage drop, which means that the voltage applied to the source is minimal. This means that the device can operate at low power levels and still provide good performance. The device also provides a large signal response when exposed to a large electromagnetic field.

The PD85035-E is a highly reliable and efficient device that has been designed specifically for use in RF applications. It offers excellent performance in peak power and power savings, as well as a wide range of temperatures and electrical interference capabilities. Its combination of advanced devices and technologies make it well suited for a variety of radio frequency signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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