PD85035TR-E

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The PD85035TR-E transistor is a high-performance field-effect transistor (FET) with radio frequency (RF) capabilities. It is a dual N-channel enhancement type depletion mode FET, suited for RF and general purpose applications such as amplifiers, switches and oscillators. The PD85035TR-E can also be used as an artificial inductor in matching networks.

Package

The PD85035TR-E comes in a variety of packages such as the standard TSSOP-8, PDIP-8, SOP-8 and QFN-8. It is available in the following voltage ratings: +12, +15 and +20V.

Features

The PD85035TR-E offers several features for improved performance. It has a low on-state resistance of 3ohms, a high breakdown voltage (BVDSS) of 250V and a low capacitance for improved high frequency operation. In addition, it has excellent transconductance and thermal stability, as well as good thermal characteristics.

Technologies

The PD85035TR-E offers several advanced technologies to maximize performance. It is made using advanced E-Mode production processes which improve performance over traditional FETs. Also, it offers integrated ESD protection, chip temperature sensors, current limiters and temperature range control. The PD85035TR-E also uses wafer level chip scale packaging, providing increased packing density and improved thermal performance.

Applications

The PD85035TR-E is widely used in applications such as power management, high-frequency switching and amplification, computer applications, communication systems and automotive. It is ideal for applications requiring fast response time, low power consumption, low distortion and high temperature stability.

Working Principle

The working principle of the PD85035TR-E is based on the transfer of charge from source to drain by the gate voltage. The charge transfer is called the gate bias. The gate voltage creates a gate voltage field that modulates the current flow from source to drain. The gate voltage can also be modulated to control the current flow through the FET. The PD85035TR-E also has temperature sensors to provide additional temperature regulation.

In operation, the gate voltage is applied to the gate of the transistor. The gate field created by the gate voltage attracts charge carriers, electrons and holes, from the region between the source and the drain. The number of charge carriers attracted by the gate voltage depends on the drain current and the gate voltage. As the gate voltage is increased, more charge carriers will be attracted to the gate and the drain current will increase.

The drain current will also be affected by the temperature of the FET. The temperature affects the mobility of charge carriers and can reduce the drain current. The temperature sensors integrated into the PD85035TR-E are used to monitor and control the temperature of the FET, which in turn helps to maintain a consistent drain current.

Conclusion

The PD85035TR-E is a high-performance FET with radio frequency capabilities. It has features such as low on-state resistance, high breakdown voltage, low capacitance and good thermal characteristics. It is suitable for a wide range of applications, including power management, high-frequency switching and amplification, computer applications, communication systems and automotive. Its working principle is based on the transfer of charge between the source and drain and the gate voltage, and it also has integrated temperature sensors to help provide temperature regulation.

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