Allicdata Part #: | 497-8297-5-ND |
Manufacturer Part#: |
PD85025-E |
Price: | $ 14.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | FET RF 40V 870MHZ |
More Detail: | RF Mosfet LDMOS 13.6V 300mA 870MHz 17.3dB 10W Powe... |
DataSheet: | PD85025-E Datasheet/PDF |
Quantity: | 1000 |
400 +: | $ 13.55630 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 870MHz |
Gain: | 17.3dB |
Voltage - Test: | 13.6V |
Current Rating: | 7A |
Noise Figure: | -- |
Current - Test: | 300mA |
Power - Output: | 10W |
Voltage - Rated: | 40V |
Package / Case: | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Supplier Device Package: | PowerSO-10RF (Formed Lead) |
Base Part Number: | PD85025 |
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The PD85025-E is a type of high-frequency transistor that is widely used in a number of applications. In particular, it is an enhancement-mode N-channel MOSFET device that is designed to operate at frequencies up to 1GHz.
The device has a wide range of features, including excellent linearity, low noise figure, low power consumption, and high input impedance. It also has a low turn-on threshold voltage, which makes it ideal for use in high-speed applications. Additionally, it is extremely reliable and has a long service life.
The working principle of the PD85025-E is relatively simple. The device is made up of two basic components, the gate and the source. When a signal is applied to the gate, it causes a change in the voltage of the source, which in turn causes current to flow through the device.
In order to ensure that the signal is applied correctly, a capacitor must be used to couple the gate and the source. This capacitor, along with an inductor, forms a parallel LC circuit, which is then connected to the gate. This ensures that the voltage and current applied to the gate are applied with the correct polarity and magnitude.
The PD85025-E has a number of applications in the fields of radio frequency (RF) and audio-frequency (AF), as well as a variety of other applications. In RF applications, the device is used as a power amplifier, as it is capable of amplifying weak signals and producing a high-power output. It can also be used as a mixer, as it is capable of converting weak signals to frequencies between 30MHz and 1GHz.
In AF applications, the device is used as a modulator, as it is capable of modulating the frequency or amplitude of weak signals. It is also used as an amplifier, as it is capable of amplifying weak signals and producing a large output voltage. Additionally, it can be used as an oscillator, as it is capable of producing stable signals at various frequencies.
The PD85025-E also has a variety of other uses, including voltage regulation and wave shaping. It can be used to generate interrupts, to regulate the output current in systems with limited power supplies, and to generate communication signals for telecommunication systems.
The PD85025-E is an ideal device for a variety of applications, due to its high linearity, low noise figure, low power consumption, and its long service life. Additionally, its low turn-on threshold voltage makes it ideal for use in high-speed applications. All of these qualities make it a great choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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PD85025TR-E | STMicroelect... | 14.2 $ | 600 | TRANS RF N-CH FET POWERSO... |
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PD85015STR-E | STMicroelect... | 14.57 $ | 556 | TRANS RF N-CH FET POWERSO... |
PD85025S-E | STMicroelect... | 19.85 $ | 395 | FET RF 40V 870MHZRF Mosfe... |
PD85025STR-E | STMicroelect... | 20.45 $ | 595 | TRANS RF N-CH FET POWERSO... |
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